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IMH10AT110

Rohm Semiconductor IMH10AT110

Part Number:
IMH10AT110
Manufacturer:
Rohm Semiconductor
Ventron No:
3584833-IMH10AT110
Description:
TRANS PREBIAS DUAL NPN SMT6
ECAD Model:
Datasheet:
IMH10AT110

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Specifications
Rohm Semiconductor IMH10AT110 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor IMH10AT110.
  • Factory Lead Time
    10 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-74, SOT-457
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2000
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT IN BIAS RESISTOR RATIO 21
  • HTS Code
    8541.21.00.75
  • Subcategory
    BIP General Purpose Small Signal
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    300mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    100mA
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    *MH10
  • Pin Count
    6
  • Max Output Current
    100mA
  • Operating Supply Voltage
    50V
  • Number of Elements
    2
  • Polarity
    NPN
  • Element Configuration
    Dual
  • Power Dissipation
    150mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 10mA 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250μA, 5mA
  • Collector Emitter Breakdown Voltage
    50V
  • Transition Frequency
    250MHz
  • Max Breakdown Voltage
    50V
  • Frequency - Transition
    250MHz
  • hFE Min
    80
  • Resistor - Base (R1)
    2.2k Ω
  • Continuous Collector Current
    100mA
  • Resistor - Emitter Base (R2)
    47k Ω
  • VCEsat-Max
    0.3 V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IMH10AT110 Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet IMH10AT110 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IMH10AT110. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IMH10AT110 More Descriptions
IMH10A Series 50 V 100 mA Surface Mount Dual NPN Digital Transistor - SC-74
Trans Digital BJT NPN 50V 100mA 6-Pin SMT T/R
TRANS PREBIAS DUAL NPN SMT6
VARISTOR 27V 30A 0603
OEMs, CMs ONLY (NO BROKERS)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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