Rohm Semiconductor IMD3AT108
- Part Number:
- IMD3AT108
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2844352-IMD3AT108
- Description:
- TRANS NPN/PNP PREBIAS 0.3W SMT6
- ECAD Model:
-
- Datasheet:
- IMD3AT108
Rohm Semiconductor IMD3AT108 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor IMD3AT108.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-74, SOT-457
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureDIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1
- HTS Code8541.21.00.75
- SubcategoryBIP General Purpose Small Signal
- Max Power Dissipation300mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number*MD3
- Pin Count6
- Max Output Current100mA
- Operating Supply Voltage50V
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA 5V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency250MHz
- Max Breakdown Voltage50V
- Frequency - Transition250MHz
- Emitter Base Voltage (VEBO)5V
- hFE Min30
- Resistor - Base (R1)10k Ω
- Continuous Collector Current50mA
- Resistor - Emitter Base (R2)10k Ω
- VCEsat-Max0.3 V
- Height1.2mm
- Length3mm
- Width1.8mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IMD3AT108 Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet IMD3AT108 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IMD3AT108. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet IMD3AT108 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IMD3AT108. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IMD3AT108 More Descriptions
IMD3A Series 50 V 100 mA Surface Mount Dual NPN/PNP Digital Transistor - SC-74
Trans Digital BJT NPN/PNP 50V 100mA 300mW 6-Pin SMT T/R
TRANSISTOR DUAL SC-74 PNP/NPN; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10
TRANSISTOR DUAL SC-74 PNP/NPN; Transistor Type:General Purpose; Transistor Polarity:NPN / PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:300mW; Min Hfe:30; ft, Typ:250MHz; Case ;RoHS Compliant: Yes
Trans Digital BJT NPN/PNP 50V 100mA 300mW 6-Pin SMT T/R
TRANSISTOR DUAL SC-74 PNP/NPN; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10
TRANSISTOR DUAL SC-74 PNP/NPN; Transistor Type:General Purpose; Transistor Polarity:NPN / PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:300mW; Min Hfe:30; ft, Typ:250MHz; Case ;RoHS Compliant: Yes
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