Rohm Semiconductor IMB10AT110
- Part Number:
- IMB10AT110
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2844367-IMB10AT110
- Description:
- TRANS PREBIAS DUAL PNP SMT6
- ECAD Model:
-
- Datasheet:
- IMB10AT110
Rohm Semiconductor IMB10AT110 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor IMB10AT110.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-74, SOT-457
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureDIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 21
- HTS Code8541.21.00.75
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC-50V
- Max Power Dissipation300mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-100mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part NumberMB10
- Pin Count6
- Max Output Current100mA
- Operating Supply Voltage50V
- Number of Elements2
- PolarityPNP
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Transistor Type2 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA 5V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency250MHz
- Max Breakdown Voltage50V
- Frequency - Transition250MHz
- hFE Min80
- Resistor - Base (R1)2.2k Ω
- Continuous Collector Current-100mA
- Resistor - Emitter Base (R2)47k Ω
- VCEsat-Max0.3 V
- Height1.1mm
- Length2.9mm
- Width1.6mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IMB10AT110 Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet IMB10AT110 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IMB10AT110. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet IMB10AT110 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IMB10AT110. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IMB10AT110 More Descriptions
IMB10A Series 50 V 100 mA Surface Mount Dual PNP Digital Transistor - SC-74
Trans Digital BJT PNP 50V 100mA 6-Pin SMT T/R
Rf Transistor, 50V, 0.1A, Sc-74 Rohs Compliant: Yes |Rohm IMB10AT110
Rohm, Bip, Tr., BRT, IMB10AT110 | ROHM Semiconductor IMB10AT110
French Electronic Distributor since 1988
Trans Digital BJT PNP 50V 100mA 6-Pin SMT T/R
Rf Transistor, 50V, 0.1A, Sc-74 Rohs Compliant: Yes |Rohm IMB10AT110
Rohm, Bip, Tr., BRT, IMB10AT110 | ROHM Semiconductor IMB10AT110
French Electronic Distributor since 1988
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