IMB11AT110

Rohm Semiconductor IMB11AT110

Part Number:
IMB11AT110
Manufacturer:
Rohm Semiconductor
Ventron No:
2461468-IMB11AT110
Description:
TRANS PREBIAS DUAL PNP SMT6
ECAD Model:
Datasheet:
IMB11AT110

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Specifications
Rohm Semiconductor IMB11AT110 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor IMB11AT110.
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-74, SOT-457
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN SILVER COPPER
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT-IN BIAS RESISTOR RATIO IS 1
  • HTS Code
    8541.21.00.75
  • Subcategory
    BIP General Purpose Small Signal
  • Voltage - Rated DC
    -50V
  • Max Power Dissipation
    300mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -50mA
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    MB11
  • Pin Count
    6
  • Max Output Current
    100mA
  • Operating Supply Voltage
    50V
  • Number of Elements
    2
  • Polarity
    PNP
  • Element Configuration
    Dual
  • Power Dissipation
    300mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    2 PNP - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 5mA 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Transition Frequency
    250MHz
  • Max Breakdown Voltage
    50V
  • Frequency - Transition
    250MHz
  • hFE Min
    30
  • Resistor - Base (R1)
    10k Ω
  • Continuous Collector Current
    -50mA
  • Resistor - Emitter Base (R2)
    10k Ω
  • VCEsat-Max
    0.3 V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IMB11AT110 Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet IMB11AT110 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IMB11AT110. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IMB11AT110 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
IMB11A Series 50 V 100 mA Surface Mount Dual PNP Digital Transistor - SC-74
Trans Digital BJT PNP 50V 100mA 6-Pin SMT T/R
TRANSISTOR DUAL SC-74 PNP/PNP; Transistor Type:General Purpose; Transistor Polarity:Dual PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:300mW; Min Hfe:30; ft, Typ:250MHz; Case ;RoHS Compliant: Yes
TRANSISTOR DUAL SC-74 PNP/PNP; Digital Transistor Polarity: Dual PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-457; No. of Pins: 6 Pin; Product Range: IMB11A Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: -100mA; DC Current Gain hFE: 30hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 30; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-457; Transistor Polarity: PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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