Rohm Semiconductor IMB11AT110
- Part Number:
- IMB11AT110
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2461468-IMB11AT110
- Description:
- TRANS PREBIAS DUAL PNP SMT6
- Datasheet:
- IMB11AT110
Rohm Semiconductor IMB11AT110 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor IMB11AT110.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-74, SOT-457
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2004
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
- HTS Code8541.21.00.75
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC-50V
- Max Power Dissipation300mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-50mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part NumberMB11
- Pin Count6
- Max Output Current100mA
- Operating Supply Voltage50V
- Number of Elements2
- PolarityPNP
- Element ConfigurationDual
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Transistor Type2 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA 5V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency250MHz
- Max Breakdown Voltage50V
- Frequency - Transition250MHz
- hFE Min30
- Resistor - Base (R1)10k Ω
- Continuous Collector Current-50mA
- Resistor - Emitter Base (R2)10k Ω
- VCEsat-Max0.3 V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IMB11AT110 Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet IMB11AT110 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IMB11AT110. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet IMB11AT110 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IMB11AT110. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IMB11AT110 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
IMB11A Series 50 V 100 mA Surface Mount Dual PNP Digital Transistor - SC-74
Trans Digital BJT PNP 50V 100mA 6-Pin SMT T/R
TRANSISTOR DUAL SC-74 PNP/PNP; Transistor Type:General Purpose; Transistor Polarity:Dual PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:300mW; Min Hfe:30; ft, Typ:250MHz; Case ;RoHS Compliant: Yes
TRANSISTOR DUAL SC-74 PNP/PNP; Digital Transistor Polarity: Dual PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-457; No. of Pins: 6 Pin; Product Range: IMB11A Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: -100mA; DC Current Gain hFE: 30hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 30; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-457; Transistor Polarity: PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz
IMB11A Series 50 V 100 mA Surface Mount Dual PNP Digital Transistor - SC-74
Trans Digital BJT PNP 50V 100mA 6-Pin SMT T/R
TRANSISTOR DUAL SC-74 PNP/PNP; Transistor Type:General Purpose; Transistor Polarity:Dual PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:300mW; Min Hfe:30; ft, Typ:250MHz; Case ;RoHS Compliant: Yes
TRANSISTOR DUAL SC-74 PNP/PNP; Digital Transistor Polarity: Dual PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-457; No. of Pins: 6 Pin; Product Range: IMB11A Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: -100mA; DC Current Gain hFE: 30hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 30; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-457; Transistor Polarity: PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz
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