IDT, Integrated Device Technology Inc IDT7164S20Y
- Part Number:
- IDT7164S20Y
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3241731-IDT7164S20Y
- Description:
- IC SRAM 64KBIT 20NS 28SOJ
- ECAD Model:
-
- Datasheet:
- IDT Suffixes
IDT, Integrated Device Technology Inc IDT7164S20Y technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc IDT7164S20Y.
- Mounting TypeSurface Mount
- Package / Case28-BSOJ (0.300, 7.62mm Width)
- Supplier Device Package28-SOJ
- Operating Temperature0°C~70°C TA
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySRAM - Asynchronous
- Voltage - Supply4.5V~5.5V
- Base Part NumberIDT7164
- Memory Size64Kb 8K x 8
- Memory TypeVolatile
- Access Time20ns
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page20ns
- RoHS StatusNon-RoHS Compliant
IDT7164S20Y Overview
This product is a surface mount component that is packaged in a tube. It is currently obsolete and has a moisture sensitivity level of 3, which means it can be exposed to moisture for up to 168 hours. The technology used is SRAM - Asynchronous and the base part number is IDT7164. This is a volatile memory type with a parallel memory interface. The write cycle time for both word and page is 20ns. This product is not compliant with RoHS standards.
IDT7164S20Y Features
Package / Case: 28-BSOJ (0.300, 7.62mm Width)
IDT7164S20Y Applications
There are a lot of Renesas Electronics America Inc.
IDT7164S20Y Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
This product is a surface mount component that is packaged in a tube. It is currently obsolete and has a moisture sensitivity level of 3, which means it can be exposed to moisture for up to 168 hours. The technology used is SRAM - Asynchronous and the base part number is IDT7164. This is a volatile memory type with a parallel memory interface. The write cycle time for both word and page is 20ns. This product is not compliant with RoHS standards.
IDT7164S20Y Features
Package / Case: 28-BSOJ (0.300, 7.62mm Width)
IDT7164S20Y Applications
There are a lot of Renesas Electronics America Inc.
IDT7164S20Y Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
IDT7164S20Y More Descriptions
Asynchronous J BEND 3-STATE 2009 (Memory Format) Memory 70C 5.5V 64kb 100mA
SRAM Chip Async Single 5V 64K-Bit 8K x 8 20ns 28-Pin SOJ Tube
French Electronic Distributor since 1988
SRAM Chip Async Single 5V 64K-Bit 8K x 8 20ns 28-Pin SOJ Tube
French Electronic Distributor since 1988
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