FAIRCHILD HUF75639G3
- Part Number:
- HUF75639G3
- Manufacturer:
- FAIRCHILD
- Ventron No:
- 5489007-HUF75639G3
- Description:
- 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs
- Datasheet:
- HUF75639G3
part#HUF75639G3, Manufacturer:FAIRCHILD is available at ventronchip.com, see description of HUF75639G3 as below .use the request quote form to request HUF75639G3 price and lead time.Every pieces of Electronic Components you buy from ventronchip.com is warranty and quality guaranted.we are an independent distributor of electronic components with extensive inventory in stock.The price and lead time for HUF75639G3 depending on the quantity required, availability and warehouse location.
HUF75639G3 More Descriptions
N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N CH 56A 100V TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:100V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:56A; Package / Case:TO-247; Power Dissipation Pd:200W; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N CH 56A 100V TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:100V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:56A; Package / Case:TO-247; Power Dissipation Pd:200W; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
The three parts on the right have similar specifications to HUF75639G3.
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ImagePart NumberManufacturerVgs(th) (Max) @ Id:Vgs (Max):Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Moisture Sensitivity Level (MSL):Lead Free Status / RoHS Status:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drive Voltage (Max Rds On, Min Rds On):Drain to Source Voltage (Vdss):Detailed Description:Current - Continuous Drain (Id) @ 25°C:Mounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Surface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRoHS StatusView Compare
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HUF75639G3--------------------------------------------------------------
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FSC4V @ 250µA±20VMOSFET (Metal Oxide)D²PAK (TO-263AB)UltraFET™42 mOhm @ 43A, 10V230W (Tc)TubeTO-263-3, D²Pak (2 Leads Tab), TO-263AB-55°C ~ 175°C (TJ)Surface Mount1 (Unlimited)Lead free / RoHS Compliant2730pF @ 25V175nC @ 20VN-Channel-10V150VN-Channel 150V 43A (Tc) 230W (Tc) Surface Mount D²PAK (TO-263AB)43A (Tc)----------------------------------------
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---------------------Surface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak-55°C~175°C TJTape & Reel (TR)UltraFET™2002Obsolete1 (Unlimited)MOSFET (Metal Oxide)55W TcN-Channel70mOhm @ 19A, 10V4V @ 250μA350pF @ 25V19A Tc24nC @ 20V55V10V±20V--------------------
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---------------------Through HoleTO-251-3 Short Leads, IPak, TO-251AA--55°C~175°C TJTubeUltraFET™-Obsolete1 (Unlimited)MOSFET (Metal Oxide)45W TcN-Channel90m Ω @ 15A, 10V4V @ 250μA250pF @ 25V15A Tc20nC @ 20V55V10V±20VNOSILICONe3yes3TINSINGLENOT SPECIFIEDNOT SPECIFIEDR-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING15A0.09Ohm55VNon-RoHS Compliant
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