HUF75639G3

FAIRCHILD HUF75639G3

Part Number:
HUF75639G3
Manufacturer:
FAIRCHILD
Ventron No:
5489007-HUF75639G3
Description:
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs
ECAD Model:
Datasheet:
HUF75639G3

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Description
part#HUF75639G3, Manufacturer:FAIRCHILD is available at ventronchip.com, see description of HUF75639G3 as below .use the request quote form to request HUF75639G3 price and lead time.Every pieces of Electronic Components you buy from ventronchip.com is warranty and quality guaranted.we are an independent distributor of electronic components with extensive inventory in stock.The price and lead time for HUF75639G3 depending on the quantity required, availability and warehouse location.
HUF75639G3 More Descriptions
N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N CH 56A 100V TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:100V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:56A; Package / Case:TO-247; Power Dissipation Pd:200W; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Product Comparison
The three parts on the right have similar specifications to HUF75639G3.
  • Image
    Part Number
    Manufacturer
    Vgs(th) (Max) @ Id:
    Vgs (Max):
    Technology:
    Supplier Device Package:
    Series:
    Rds On (Max) @ Id, Vgs:
    Power Dissipation (Max):
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Moisture Sensitivity Level (MSL):
    Lead Free Status / RoHS Status:
    Input Capacitance (Ciss) (Max) @ Vds:
    Gate Charge (Qg) (Max) @ Vgs:
    FET Type:
    FET Feature:
    Drive Voltage (Max Rds On, Min Rds On):
    Drain to Source Voltage (Vdss):
    Detailed Description:
    Current - Continuous Drain (Id) @ 25°C:
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    RoHS Status
    View Compare
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    HUF75639G3
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  • HUF75842S3S
    FSC
    4V @ 250µA
    ±20V
    MOSFET (Metal Oxide)
    D²PAK (TO-263AB)
    UltraFET™
    42 mOhm @ 43A, 10V
    230W (Tc)
    Tube
    TO-263-3, D²Pak (2 Leads Tab), TO-263AB
    -55°C ~ 175°C (TJ)
    Surface Mount
    1 (Unlimited)
    Lead free / RoHS Compliant
    2730pF @ 25V
    175nC @ 20V
    N-Channel
    -
    10V
    150V
    N-Channel 150V 43A (Tc) 230W (Tc) Surface Mount D²PAK (TO-263AB)
    43A (Tc)
    -
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  • HUF75309D3ST
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    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    D-Pak
    -55°C~175°C TJ
    Tape & Reel (TR)
    UltraFET™
    2002
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    55W Tc
    N-Channel
    70mOhm @ 19A, 10V
    4V @ 250μA
    350pF @ 25V
    19A Tc
    24nC @ 20V
    55V
    10V
    ±20V
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  • HUF75307D3
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    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -55°C~175°C TJ
    Tube
    UltraFET™
    -
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    45W Tc
    N-Channel
    90m Ω @ 15A, 10V
    4V @ 250μA
    250pF @ 25V
    15A Tc
    20nC @ 20V
    55V
    10V
    ±20V
    NO
    SILICON
    e3
    yes
    3
    TIN
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSIP-T3
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    15A
    0.09Ohm
    55V
    Non-RoHS Compliant
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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