Fairchild/ON Semiconductor HUF75307D3
- Part Number:
- HUF75307D3
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2489522-HUF75307D3
- Description:
- MOSFET N-CH 55V 15A IPAK
- ECAD Model:
-
- Datasheet:
- HUF75307P3/D3/D3S
Fairchild/ON Semiconductor HUF75307D3 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HUF75307D3.
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesUltraFET™
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSIP-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max45W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs90m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds250pF @ 25V
- Current - Continuous Drain (Id) @ 25°C15A Tc
- Gate Charge (Qg) (Max) @ Vgs20nC @ 20V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)15A
- Drain-source On Resistance-Max0.09Ohm
- DS Breakdown Voltage-Min55V
- RoHS StatusNon-RoHS Compliant
HUF75307D3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 250pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 15A.Normal operation requires that the DS breakdown voltage remain above 55V.For this transistor to work, a voltage 55V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
HUF75307D3 Features
a 55V drain to source voltage (Vdss)
HUF75307D3 Applications
There are a lot of Rochester Electronics, LLC
HUF75307D3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 250pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 15A.Normal operation requires that the DS breakdown voltage remain above 55V.For this transistor to work, a voltage 55V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
HUF75307D3 Features
a 55V drain to source voltage (Vdss)
HUF75307D3 Applications
There are a lot of Rochester Electronics, LLC
HUF75307D3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
HUF75307D3 More Descriptions
55V,15A,0.090 OHM,NCH ULTRAFET POWER MOSFET
MOSFET, N, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:13A; Resistance, Rds On:0.09ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:I-PAK; Termination ;RoHS Compliant: Yes
MOSFET, N I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:13A; Resistance, Rds On:0.09ohm; Case Style:TO-251 (I-Pak); Lead Length:9.65mm; Lead Spacing:2.28mm; Power Dissipation:35W; Power, Pd:35W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, t Off:45ns; Time, t On:40ns; Transistors, No. of:1; Voltage, Vds Max:55V
MOSFET, N, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:13A; Resistance, Rds On:0.09ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:I-PAK; Termination ;RoHS Compliant: Yes
MOSFET, N I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:13A; Resistance, Rds On:0.09ohm; Case Style:TO-251 (I-Pak); Lead Length:9.65mm; Lead Spacing:2.28mm; Power Dissipation:35W; Power, Pd:35W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, t Off:45ns; Time, t On:40ns; Transistors, No. of:1; Voltage, Vds Max:55V
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