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HUF75345S3ST

INTERSIL HUF75345S3ST

Part Number:
HUF75345S3ST
Manufacturer:
INTERSIL
Ventron No:
6122858-HUF75345S3ST
Description:
ECAD Model:
Datasheet:
HUF75345S3ST

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Specifications
INTERSIL HUF75345S3ST technical specifications, attributes, parameters and parts with similar specifications to INTERSIL HUF75345S3ST.
  • Vgs(th) (Max) @ Id:
    4V @ 250µA
  • Vgs (Max):
    ±20V
  • Technology:
    MOSFET (Metal Oxide)
  • Supplier Device Package:
    D²PAK (TO-263AB)
  • Series:
    UltraFET™
  • Rds On (Max) @ Id, Vgs:
    7 mOhm @ 75A, 10V
  • Power Dissipation (Max):
    325W (Tc)
  • Packaging:
    Original-Reel®
  • Package / Case:
    TO-263-3, D²Pak (2 Leads Tab), TO-263AB
  • Other Names:
    HUF75345S3STDKR
  • Operating Temperature:
    -55°C ~ 175°C (TJ)
  • Mounting Type:
    Surface Mount
  • Moisture Sensitivity Level (MSL):
    1 (Unlimited)
  • Lead Free Status / RoHS Status:
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds:
    4000pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs:
    275nC @ 20V
  • FET Type:
    N-Channel
  • FET Feature:
    -
  • Drive Voltage (Max Rds On, Min Rds On):
    10V
  • Drain to Source Voltage (Vdss):
    55V
  • Detailed Description:
    N-Channel 55V 75A (Tc) 325W (Tc) Surface Mount D²PAK (TO-263AB)
  • Current - Continuous Drain (Id) @ 25°C:
    75A (Tc)
Description
Images are for reference only.See Product Specifications for product details.If you are interested to buy HUF75345S3ST.
HUF75345S3ST More Descriptions
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,75A I(D),TO-263AB
N-Channel 55 V 0.007 Ohm Surface Mount UltraFET Power Mosfet - TO-263AB
N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ
Trans MOSFET N-CH 55V 75A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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