Diodes Incorporated FZT796ATA
- Part Number:
- FZT796ATA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2465163-FZT796ATA
- Description:
- TRANS PNP 200V 0.5A SOT-223
- Datasheet:
- FZT796ATA
Diodes Incorporated FZT796ATA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT796ATA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2000
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated DC-200V
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFZT796
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)200V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 10mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 20mA, 200mA
- Collector Emitter Breakdown Voltage200V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage-300mV
- Max Breakdown Voltage200V
- Collector Base Voltage (VCBO)200V
- Emitter Base Voltage (VEBO)-5V
- Continuous Collector Current-500mA
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FZT796ATA Overview
DC current gain in this device equals 300 @ 10mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 20mA, 200mA.Single BJT transistor is essential to maintain the continuous collector voltage at -500mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 200V volts.In extreme cases, the collector current can be as low as 500mA volts.
FZT796ATA Features
the DC current gain for this device is 300 @ 10mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 20mA, 200mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 100MHz
FZT796ATA Applications
There are a lot of Diodes Incorporated
FZT796ATA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 300 @ 10mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 20mA, 200mA.Single BJT transistor is essential to maintain the continuous collector voltage at -500mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 200V volts.In extreme cases, the collector current can be as low as 500mA volts.
FZT796ATA Features
the DC current gain for this device is 300 @ 10mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 20mA, 200mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 100MHz
FZT796ATA Applications
There are a lot of Diodes Incorporated
FZT796ATA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FZT796ATA More Descriptions
FZT796A Series PNP 0.5A 200 V Silicon Planar Medium Power Transistor - SOT-223-3
Transistor, Pnp, 200V, 0.5A, Sot-223 Rohs Compliant: Yes |Diodes Inc. FZT796ATA
Trans GP BJT PNP 200V 0.5A 3000mW 4-Pin(3 Tab) SOT-223 T/R
Transistor, Pnp, 200V, 0.5A, Sot-223 Rohs Compliant: Yes |Diodes Inc. FZT796ATA
Trans GP BJT PNP 200V 0.5A 3000mW 4-Pin(3 Tab) SOT-223 T/R
The three parts on the right have similar specifications to FZT796ATA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingTerminationPin CountJESD-30 CodePolarityVoltageFrequency - TransitionhFE MinHTS CodeReach Compliance CodeQualification StatusConfigurationCurrent - Collector (Ic) (Max)View Compare
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FZT796ATA15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2000e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)-200V2WDUALGULL WING260-500mA100MHz40FZT7961Single2WCOLLECTORSWITCHING100MHzPNPPNP200V500mA300 @ 10mA 10V100nA ICBO300mV @ 20mA, 200mA200V100MHz-300mV200V200V-5V-500mA1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free--------------
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13 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)-70V2WDUALGULL WING260-2A160MHz40FZT7921Single2WCOLLECTORSWITCHING160MHzPNPPNP70V2A300 @ 10mA 2V100nA ICBO500mV @ 200mA, 2A70V160MHz-300mV70V75V5V-1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free-------------
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15 WeeksSurface MountSurface MountTO-261-4, TO-261AA37.994566mgSILICON-55°C~150°C TJCut Tape (CT)2000e3noActive1 (Unlimited)4EAR99--120V2WDUALGULL WING260-2A-40FZT7051Single2WCOLLECTORSWITCHING--PNP - Darlington120V2A3000 @ 1A 5V10μA2.5V @ 2mA, 2A120V160MHz1.3V120V140V10V-2A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead FreeTinSMD/SMT4R-PDSO-G4PNP100V160MHz3000-----
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-Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)4EAR99MATTE TIN-400V2WDUALGULL WING260-500mA-40FZT7581--COLLECTORSWITCHING50MHzPNPPNP500mV500mA40 @ 200mA 10V100nA500mV @ 10mA, 100mA400V50MHz-500mV--400V-5V----No SVHC-RoHS CompliantLead Free---R-PDSO-G4----8541.29.00.75unknownNot QualifiedSINGLE500mA
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