Diodes Incorporated FZT789ATA

FZT789ATA Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 3A.A -3A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 25V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

FZT789ATA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 100mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz


FZT789ATA Applications
There are a lot of Diodes Incorporated
FZT789ATA applications of single BJT transistors.


Inverter
Interface
Driver
Muting