Diodes Incorporated FZT757TA
- Part Number:
- FZT757TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464365-FZT757TA
- Description:
- TRANS PNP 300V 0.5A SOT-223
- ECAD Model:
-
- Datasheet:
- FZT757TA
Diodes Incorporated FZT757TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT757TA.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-300V
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Frequency30MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFZT757
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product30MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency30MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)-5V
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FZT757TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 100mA 5V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 30MHz.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
FZT757TA Features
the DC current gain for this device is 50 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 30MHz
FZT757TA Applications
There are a lot of Diodes Incorporated
FZT757TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 100mA 5V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 30MHz.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
FZT757TA Features
the DC current gain for this device is 50 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 30MHz
FZT757TA Applications
There are a lot of Diodes Incorporated
FZT757TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FZT757TA More Descriptions
TRANS PNP 300V 0.5A SOT-223 / Trans GP BJT PNP 300V 0.5A 2000mW 4-Pin(3 Tab) SOT-223 T/R
FZT757 Series 300 V 0.5 A PNP Silicon Planar High Voltage Transistor SOT-223-3
PNP High Voltage Transistor SOT-223 | Diodes Inc FZT757TA
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
TRANSISTOR, PNP, 300V, 0.5A, SOT223; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 2W; DC Collector Current: -500mA; DC Current Gain hFE: 50hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
FZT757 Series 300 V 0.5 A PNP Silicon Planar High Voltage Transistor SOT-223-3
PNP High Voltage Transistor SOT-223 | Diodes Inc FZT757TA
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
TRANSISTOR, PNP, 300V, 0.5A, SOT223; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 2W; DC Collector Current: -500mA; DC Current Gain hFE: 50hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
The three parts on the right have similar specifications to FZT757TA.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodeReach Compliance CodeJESD-30 CodeQualification StatusConfigurationCurrent - Collector (Ic) (Max)Supplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityVoltage - Collector Emitter Breakdown (Max)View Compare
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FZT757TA12 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors-300V2WDUALGULL WING260-500mA30MHz40FZT7571Single2WCOLLECTORSWITCHING30MHzPNPPNP300V500mA50 @ 100mA 5V100nA ICBO500mV @ 10mA, 100mA300V30MHz-500mV300V300V-5V1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free------------ -
13 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)--70V2WDUALGULL WING260-2A160MHz40FZT7921Single2WCOLLECTORSWITCHING160MHzPNPPNP70V2A300 @ 10mA 2V100nA ICBO500mV @ 200mA, 2A70V160MHz-300mV70V75V5V1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free-----------
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-Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)4EAR99MATTE TIN--400V2WDUALGULL WING260-500mA-40FZT7581--COLLECTORSWITCHING50MHzPNPPNP500mV500mA40 @ 200mA 10V100nA500mV @ 10mA, 100mA400V50MHz-500mV--400V-5V---No SVHC-RoHS CompliantLead Free8541.29.00.75unknownR-PDSO-G4Not QualifiedSINGLE500mA-----
-
-Surface MountSurface MountTO-261-4, TO-261AA-7.994566mg--55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-----15V2W----3A--FZT788-Single---150MHz-PNP-15V3A---15V--500mV--15V5V1.65mm6.7mm3.7mm--RoHS CompliantLead Free-----3ASOT-223150°C-55°CPNP15V
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