Diodes Incorporated FZT749TA
- Part Number:
- FZT749TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2465157-FZT749TA
- Description:
- TRANS PNP 25V 3A SOT-223
- Datasheet:
- FZT749TA
Diodes Incorporated FZT749TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT749TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-25V
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-3A
- Frequency160MHz
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberFZT749
- Number of Elements1
- Voltage25V
- Element ConfigurationSingle
- Current3A
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product160MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)25V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 300mA, 3A
- Collector Emitter Breakdown Voltage25V
- Transition Frequency160MHz
- Collector Emitter Saturation Voltage-400mV
- Max Breakdown Voltage25V
- Collector Base Voltage (VCBO)35V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current-3A
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FZT749TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 1A 2V.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 300mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at -3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -3A.A transition frequency of 160MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 3A volts at its maximum.
FZT749TA Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 160MHz
FZT749TA Applications
There are a lot of Diodes Incorporated
FZT749TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 1A 2V.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 300mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at -3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -3A.A transition frequency of 160MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 3A volts at its maximum.
FZT749TA Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 160MHz
FZT749TA Applications
There are a lot of Diodes Incorporated
FZT749TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FZT749TA More Descriptions
Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
FZT749Series PNP 3 A 25 V SMT Silicon Medium Power Transistor - SOT-223
Trans GP BJT PNP 25V 3A 3000mW 4-Pin(3 Tab) SOT-223 T/R
PNP medium power SOT223 TX, FZT749TA | Diodes Inc FZT749TA
Transistors - Bipolar (BJT) - Single TO-261-4, TO-261AA 1 (Unlimited) Cut Tape (CT) Surface Mount PNP 100 @ 1A 2V 600mV @ 300mA, 3A -55°C~150°C TJ 100nA ICBO TRANS PNP 25V 3A SOT-223
FZT749Series PNP 3 A 25 V SMT Silicon Medium Power Transistor - SOT-223
Trans GP BJT PNP 25V 3A 3000mW 4-Pin(3 Tab) SOT-223 T/R
PNP medium power SOT223 TX, FZT749TA | Diodes Inc FZT749TA
Transistors - Bipolar (BJT) - Single TO-261-4, TO-261AA 1 (Unlimited) Cut Tape (CT) Surface Mount PNP 100 @ 1A 2V 600mV @ 300mA, 3A -55°C~150°C TJ 100nA ICBO TRANS PNP 25V 3A SOT-223
The three parts on the right have similar specifications to FZT749TA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsVoltageElement ConfigurationCurrentPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingView Compare
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FZT749TA15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors-25V2WDUALGULL WING260-3A160MHz30FZT749125VSingle3A2WCOLLECTORSWITCHING160MHzPNPPNP25V3A100 @ 1A 2V100nA ICBO600mV @ 300mA, 3A25V160MHz-400mV25V35V5V-3A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free--
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13 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)--70V2WDUALGULL WING260-2A160MHz40FZT7921-Single-2WCOLLECTORSWITCHING160MHzPNPPNP70V2A300 @ 10mA 2V100nA ICBO500mV @ 200mA, 2A70V160MHz-300mV70V75V5V-1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free-
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15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors-40V2WDUALGULL WING260-2A100MHz40FZT790A1-Single-2WCOLLECTORSWITCHING100MHzPNPPNP40V3A300 @ 10mA 2V100nA ICBO750mV @ 50mA, 2A40V100MHz-400mV40V50V5V-3A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free-
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15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3noActive1 (Unlimited)4EAR99---100V2WDUALGULL WING260-2A140MHz40FZT7531100VSingle2A2WCOLLECTORSWITCHING140MHzPNPPNP100V2A100 @ 500mA 2V100nA ICBO500mV @ 200mA, 2A100V140MHz-300mV100V120V5V-2A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead FreeTin
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