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Infineon Technologies FS800R07A2E3B31BOSA1
- Part Number:
- FS800R07A2E3B31BOSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3554792-FS800R07A2E3B31BOSA1
- Description:
- IGBT MODULES
- ECAD Model:
-
- Datasheet:
- FS800R07A2E3B31BOSA1
Infineon Technologies FS800R07A2E3B31BOSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies FS800R07A2E3B31BOSA1.
- Factory Lead Time26 Weeks
- Published2006
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Halogen FreeNot Halogen Free
- Max Repetitive Reverse Voltage (Vrrm)680V
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
FS800R07A2E3B31BOSA1 Description
FS800R07A2E3B31BOSA1 is a HybridPACK?2 module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC. The transistor FS800R07A2E3B31BOSA1 can be applied in Automotive Applications, Hybrid Electrical Vehicles (H) EVs, Commercial Agriculture Vehicles, and Motor Drive applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FS800R07A2E3B31BOSA1 is in the tray package with 1550W Power dissipation.
FS800R07A2E3B31BOSA1 Features
Increased blocking voltage capability to 650V Extended Operation Temperature Tvj op High Current Density Low Inductive Design Low Switching Losses Low VCcsat Tvj op= 150°C Tvj op= 175°C Trench IGBT 3 Vcesat with positive Temperature Coefficient
FS800R07A2E3B31BOSA1 Applications
Automotive Applications Hybrid Electrical Vehicles (H)EV Commercial Agriculture Vehicles Motor Drives
FS800R07A2E3B31BOSA1 is a HybridPACK?2 module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC. The transistor FS800R07A2E3B31BOSA1 can be applied in Automotive Applications, Hybrid Electrical Vehicles (H) EVs, Commercial Agriculture Vehicles, and Motor Drive applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FS800R07A2E3B31BOSA1 is in the tray package with 1550W Power dissipation.
FS800R07A2E3B31BOSA1 Features
Increased blocking voltage capability to 650V Extended Operation Temperature Tvj op High Current Density Low Inductive Design Low Switching Losses Low VCcsat Tvj op= 150°C Tvj op= 175°C Trench IGBT 3 Vcesat with positive Temperature Coefficient
FS800R07A2E3B31BOSA1 Applications
Automotive Applications Hybrid Electrical Vehicles (H)EV Commercial Agriculture Vehicles Motor Drives
FS800R07A2E3B31BOSA1 More Descriptions
Trans IGBT Module N-CH 650V 700A 1550000mW Automotive 33-Pin HYBRID2-1 Tray
TRANSISTOR, IGBT MODULE, 650V, 700A; Transistor Polarity: N Channel; DC Collector Current: 700A; Collector Emitter Saturation Voltage Vce(on): 1.3V; Power Dissipation Pd: 1.55kW; Collector Emitter Voltage V(br)ceo: 650V; Tran
Transistor, Igbt Module, 650V, 700A; Continuous Collector Current:700A; Collector Emitter Saturation Voltage:1.3V; Power Dissipation:1.55Kw; Operating Temperature Max:150°C; Igbt Termination:Press Fit; Transistor Mounting:Panel Rohs Compliant: Yes |Infineon FS800R07A2E3B31BOSA1
HybridPACK 2 Enhanced is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications for power ranges of more than 160kW (peak). | Summary of Features: Increased blocking voltage capability to 680V; High Current Density; Low inductive design; Low Switching Losses; Trench IGBT 3; T(vj op) = 175C (max 10 sec); T(vj op) = 150C (continuously); Current rating up to 800A; V(CEsat) improved by 100mV (compared to standard HP2); 2.5 kV AC 1min Insulation; Direct Cooled Base Plate; High Power Density; Integrated NTC temperature sensor; Isolated Base Plate; Copper Base Plate; RoHS compilant | Benefits: Cost efficient system approach; High efficiency due to low power losses; High reliability; Compact design; HybridKIT 2 Enhanced reference design available; Very High Power Density | Target Applications: hybrid; cav; aircon; drives
TRANSISTOR, IGBT MODULE, 650V, 700A; Transistor Polarity: N Channel; DC Collector Current: 700A; Collector Emitter Saturation Voltage Vce(on): 1.3V; Power Dissipation Pd: 1.55kW; Collector Emitter Voltage V(br)ceo: 650V; Tran
Transistor, Igbt Module, 650V, 700A; Continuous Collector Current:700A; Collector Emitter Saturation Voltage:1.3V; Power Dissipation:1.55Kw; Operating Temperature Max:150°C; Igbt Termination:Press Fit; Transistor Mounting:Panel Rohs Compliant: Yes |Infineon FS800R07A2E3B31BOSA1
HybridPACK 2 Enhanced is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications for power ranges of more than 160kW (peak). | Summary of Features: Increased blocking voltage capability to 680V; High Current Density; Low inductive design; Low Switching Losses; Trench IGBT 3; T(vj op) = 175C (max 10 sec); T(vj op) = 150C (continuously); Current rating up to 800A; V(CEsat) improved by 100mV (compared to standard HP2); 2.5 kV AC 1min Insulation; Direct Cooled Base Plate; High Power Density; Integrated NTC temperature sensor; Isolated Base Plate; Copper Base Plate; RoHS compilant | Benefits: Cost efficient system approach; High efficiency due to low power losses; High reliability; Compact design; HybridKIT 2 Enhanced reference design available; Very High Power Density | Target Applications: hybrid; cav; aircon; drives
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