Fairchild/ON Semiconductor FDS6984AS
- Part Number:
- FDS6984AS
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2474098-FDS6984AS
- Description:
- MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC
- ECAD Model:
-
- Datasheet:
- FDS6984AS
Fairchild/ON Semiconductor FDS6984AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6984AS.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time18 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight187mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®, SyncFET™
- Published2005
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance32MOhm
- Max Power Dissipation2W
- Number of Elements2
- Power Dissipation2W
- Power - Max900mW
- FET Type2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs31m Ω @ 5.5A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds420pF @ 15V
- Current - Continuous Drain (Id) @ 25°C5.5A 8.5A
- Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
- Rise Time6ns
- Fall Time (Typ)2 ns
- Turn-Off Delay Time22 ns
- Continuous Drain Current (ID)8.5A
- Threshold Voltage1.7V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- FET FeatureLogic Level Gate
- Height1.5mm
- Length5mm
- Width3.99mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDS6984AS Description
The FDS6984AS is designed to replace two single SO-8 MOSFET and Schottky diodes in synchronous DC:DC power supplies to provide a variety of external voltages for laptops and other battery-powered electronic devices. The FDS6984AS contains two unique 30V, N-channel, logic level, and power slot MOSFET designed to maximize power conversion efficiency.The design of the high-end switch (Q1) focuses on reducing the switching loss, while the low-end switch (Q2) is optimized to reduce the turn-on loss. Q2 also includes a patented combination of MOSFET and Schottky diode monolithic integration.
FDS6984AS Features Q2 Optimized to minimize conduction losses Includes SyncFET Schottky diode 8.5A, 30V Max. RDS(on) = 20 mΩ at VGS = 10 V Max. RDS(on) = 28 mΩ at VGS = 4.5 V Q1 Optimized for Low Switching Losses 5.5A, 30V Max. RDS(on) = 31 mΩ at VGS = 10 V Max. RDS(on) = 40 mΩ at VGS = 4.5 V Low gate charge (8nC typical) RoHS Compliant
FDS6984AS Applications
This product is general usage and suitable for many different applications.
FDS6984AS Features Q2 Optimized to minimize conduction losses Includes SyncFET Schottky diode 8.5A, 30V Max. RDS(on) = 20 mΩ at VGS = 10 V Max. RDS(on) = 28 mΩ at VGS = 4.5 V Q1 Optimized for Low Switching Losses 5.5A, 30V Max. RDS(on) = 31 mΩ at VGS = 10 V Max. RDS(on) = 40 mΩ at VGS = 4.5 V Low gate charge (8nC typical) RoHS Compliant
FDS6984AS Applications
This product is general usage and suitable for many different applications.
FDS6984AS More Descriptions
MOSFET Transistor, Dual N Channel Schottky, 8.5 A, 30 V, 0.017 ohm, 10 V, 1.7 V
Transistor MOSFET Array Dual N-CH 30V 5.5A/8.5A 8-Pin SOIC T/R - Tape and Reel
Dual N-Channel 30 V 32 mOhm 2 W Power Trench Mosfet - SOIC-8
The FDS6984AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6984AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency.The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes a patented combination of a MOSFET monolithically integrated with a Schottky diode.
Transistor MOSFET Array Dual N-CH 30V 5.5A/8.5A 8-Pin SOIC T/R - Tape and Reel
Dual N-Channel 30 V 32 mOhm 2 W Power Trench Mosfet - SOIC-8
The FDS6984AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6984AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency.The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes a patented combination of a MOSFET monolithically integrated with a Schottky diode.
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