Fairchild/ON Semiconductor FDS6982S

Name: FDS6982S
Brand: Fairchild/ON Semiconductor
SKU: 2474236-FDS6982S
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS6982S

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2474236-FDS6982S

Description:: MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC

ECAD Model:

Datasheet:: FDS6982S

Specifications

Fairchild/ON Semiconductor FDS6982S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6982S.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
230.4mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®, SyncFET™
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
30V
Max Power Dissipation
900mW
Number of Elements
2
Power Dissipation
2W
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
28m Ω @ 6.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2040pF @ 10V
Current - Continuous Drain (Id) @ 25°C
6.3A 8.6A
Gate Charge (Qg) (Max) @ Vgs
12nC @ 5V
Rise Time
10ns
Fall Time (Typ)
14 ns
Turn-Off Delay Time
34 ns
Continuous Drain Current (ID)
8.6A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
FET Feature
Logic Level Gate
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

FDS6982S Description The FDS6982S is designed to replace two single SO-8 MOSFET and Schottky diodes in synchronous DC:DC power supplies to provide a variety of external voltages for laptops and other battery-powered electronic devices. The FDS6982S contains two unique 30V.N channel logic levels. PowerTran MOSFET is designed to maximize power conversion efficiency. The design focus of the high-end switch (Q1) is to reduce the switching loss, while the low-end switch (Q2) is optimized to reduce the induction loss. 02 also includes an integrated Schottky diode using Fair child monolithic SyncFET technology. FDS6982S Features
Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode 8.6A,30V Rps(an)=0.016Ω @VGs=10V Rps(on)=0.022Ω @VGs=4.5V Q1: Optimized for low switching losses Low Gate Charge(8.5nC typical) 6.3A,30VRs(an)=0.028Ω @VGS=10V Rpsan)=0.035Ω @VGs=4.5V FDS6982S Applications
the low-end switch (Q2

FDS6982S More Descriptions

Transistor MOSFET Array Dual N-CH 30V 6.3A/8.6A 8-Pin SOIC T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel / Schottky Diode; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.6A; On Resistance, Rds(on):13.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, DUAL, NN, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:6.3A; Cont Current Id N Channel 3:8.6A; Current Id Max:8.6A; Current Temperature:25°C; Forward Current If(AV):3A; Forward Voltage VF Max:700mV; Full Power Rating Temperature:25°C; No. of Transistors:2; On State Resistance Channel 1:28mohm; On State Resistance N Channel 2:16mohm; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:30A; Pulse Current Idm N Channel 2:20A; Pulse Current Idm N Channel 3:30A; SMD Marking:FDS6982S; Termination Type:SMD; Voltage Vds N Channel 1:30V; Voltage Vds N Channel 2:30V; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V

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