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FDS6982AS

Fairchild/ON Semiconductor FDS6982AS

Part Number:
FDS6982AS
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3069739-FDS6982AS
Description:
MOSFET 2N-CH 30V 6.3A/8.6A 8-SO
ECAD Model:
Datasheet:
FDS6982AS

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Specifications
Fairchild/ON Semiconductor FDS6982AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6982AS.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    18 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    187mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®, SyncFET™
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    28MOhm
  • Voltage - Rated DC
    30V
  • Max Power Dissipation
    2W
  • Terminal Form
    GULL WING
  • Current Rating
    8.6A
  • Number of Elements
    2
  • Number of Channels
    2
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • Turn On Delay Time
    12 ns
  • Power - Max
    900mW
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    28m Ω @ 6.3A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    610pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    6.3A 8.6A
  • Gate Charge (Qg) (Max) @ Vgs
    15nC @ 10V
  • Rise Time
    7ns
  • Fall Time (Typ)
    3 ns
  • Turn-Off Delay Time
    24 ns
  • Continuous Drain Current (ID)
    8.6A
  • Threshold Voltage
    1.9V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    30A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Recovery Time
    19 ns
  • Max Junction Temperature (Tj)
    150°C
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    1.4 V
  • Turn Off Time-Max (toff)
    64ns
  • Turn On Time-Max (ton)
    34ns
  • Height
    1.75mm
  • Length
    5mm
  • Width
    3.99mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDS6982AS         Description
  The FDS6982AS is designed to replace two single SO-8 MOSFET and Schottky diodes in synchronous DC:DC power supplies to provide a variety of external voltages for laptops and other battery-powered electronic devices. The FDS6982AS contains two unique 30V, N-channel, logic levels PowerTritch MOSFET designed to maximize power conversion efficiency. The design of the high-end switch (Q1) focuses on reducing the switching loss, while the low-end switch (Q2) is optimized to reduce the turn-on loss. Q2 also includes an integrated Schottky diode using on Semiconductor monolithic SyncFET technology.
FDS6982AS         Features   Q2 Optimized to minimize conduction losses Includes SyncFET Schottky body diode 8.6A, 30V Max. RDS(on) = 13.5 m|? at VGS = 10 V Max. RDS(on) = 16.5 m|? at VGS = 4.5 V Low gate charge (21nC typical) Q1 Optimized for low switching losses 6.3A, 30V Max. RDS(on) = 28.0 m|? at VGS = 10 V Max. RDS(on) = 35.0 m|? at VGS = 4.5 V Low gate charge (11nC typical)
FDS6982AS    Applications This product is general usage and suitable for many different applications. Notebook    
FDS6982AS More Descriptions
Transistor MOSFET Array Dual N-CH 30V 6.3A/8.6A 8-Pin SOIC T/R
ON SEMICONDUCTOR - FDS6982AS - Dual MOSFET, Dual N Channel, 8.6 A, 30 V, 0.011 ohm, 10 V, 1.4 V
Dual N-Channel 30 V 28/13.5 mOhm Surface Mount Dual PowerTrench SyncFET - SOIC-8
MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:6.3A; Cont Current Id N Channel 3:8.6A; Current Id Max:8.6A; No. of Transistors:1; On State Resistance Channel 1:13.5mohm; On State Resistance N Channel 2:28mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Pulse Current Idm N Channel 2:20A; Pulse Current Idm N Channel 3:30A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.4V; Voltage Vgs Rds on Measurement:10V
The FDS6982AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6982AS contains two unique 30V, N-channel, logic level, PowerTrench® MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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