Fairchild/ON Semiconductor FDS6975

Name: FDS6975
Brand: Fairchild/ON Semiconductor
SKU: 2847714-FDS6975
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS6975

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2847714-FDS6975

Description:: MOSFET 2P-CH 30V 6A 8SOIC

ECAD Model:

Datasheet:: FDS6975

Part Pictures

Specifications

Fairchild/ON Semiconductor FDS6975 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6975.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
187mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
32mOhm
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Max Power Dissipation
2W
Terminal Form
GULL WING
Current Rating
-6A
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Turn On Delay Time
13 ns
Power - Max
900mW
FET Type
2 P-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
32m Ω @ 6A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1540pF @ 15V
Current - Continuous Drain (Id) @ 25°C
6A
Gate Charge (Qg) (Max) @ Vgs
20nC @ 5V
Rise Time
22ns
Drain to Source Voltage (Vdss)
30V
Fall Time (Typ)
18 ns
Turn-Off Delay Time
47 ns
Continuous Drain Current (ID)
-6A
Threshold Voltage
-1.7V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
6A
Drain to Source Breakdown Voltage
-30V
Dual Supply Voltage
-30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
-1.7 V
Height
1.5mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDS6975 Description

These P-channel logic level MOSFET are manufactured using an advanced PowerTrtch process that is customized to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are ideal for laptop applications: load switching and power management, battery charging circuits and DC/DC conversion.

FDS6975 Features -6 A, -30 V RDS(ON) = 0.032 Ω @ VGS = -10 V RDS(ON) = 0.045 Ω @ VGS = -4.5 V. Low gate charge (14.5nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.
FDS6975 Applications
This product is general usage and suitable for many different applications. Load Switch Power Management Battery Charging Circuit DC/DC Converters

FDS6975 More Descriptions

Transistor MOSFET Array Dual P-CH 30V 6A 8-Pin SOIC T/R - Tape and Reel
Dual P-Channel PowerTrench® MOSFET, Logic Level, -30V, -6A, 32mΩ
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6A; On Resistance, Rds(on):0.025ohm; Rds(on) Test Voltage, Vgs:-10V; Threshold Voltage, Vgs Typ:-1.7V ;RoHS Compliant: Yes
These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
MOSFET, DUAL, PP, SO-8; Transistor Type:MOSFET; Transistor Polarity:PP; Voltage, Vds Typ:-30V; Current, Id Cont:6A; Resistance, Rds On:0.032ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1.7V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to 150°C; Current, Idm Pulse:20A; No. of Pins:8; Power Dissipation:2W; Power, Pd:2W; SMD Marking:FDS6975; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:2; Voltage, Vds:30V; Voltage, Vds Max:30V; Voltage, Vgs th Max:-3V