Fairchild/ON Semiconductor FDS6930B

Name: FDS6930B
Brand: Fairchild/ON Semiconductor
SKU: 2473518-FDS6930B
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS6930B

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2473518-FDS6930B

Description:: MOSFET 2N-CH 30V 5.5A 8SOIC

ECAD Model:

Datasheet:: FDS6930B

Specifications

Fairchild/ON Semiconductor FDS6930B technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6930B.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
38MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Max Power Dissipation
2W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
5.5A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
2
Voltage
30V
Current
55A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Turn On Delay Time
6 ns
Power - Max
900mW
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
38m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
412pF @ 15V
Gate Charge (Qg) (Max) @ Vgs
3.8nC @ 5V
Rise Time
6ns
Fall Time (Typ)
2 ns
Turn-Off Delay Time
16 ns
Continuous Drain Current (ID)
5.5A
Threshold Voltage
1.9V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
1.9 V
Feedback Cap-Max (Crss)
60 pF
Height
1.5mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDS6930B Description These N-channel logic level MOSFET are produced using advanced power channel semiconductor processes, and in particular are considered to reduce on-resistance and maintain excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDS6930B Features
5.5A,30 V.RDS(ON)=38mΩ @VGs=10V Rps(ON)=50mΩ@VGs=4.5V Fast switching speed Low gate charge High performance trench techinologyfor extremely lowRDS(ON) High power and current handling capability FDS6930B Applications
low-voltage and battery-powered applications

FDS6930B More Descriptions

Transistor MOSFET Array Dual N-CH 30V 5.5A 8-Pin SOIC T/R - Tape and Reel
Dual N-Channel Logic Level PowerTrench® MOSFET, 30V, 5.5A, 38mΩ
These N-Channel Logic Level MOSFETs are producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintainsuperior switching performance.These devices are well suited for low voltage andbattery powered applications where low in-line powerloss and fast switching are required.

Certification