Fairchild/ON Semiconductor FDS6930A
- Part Number:
- FDS6930A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2473589-FDS6930A
- Description:
- MOSFET 2N-CH 30V 5.5A 8SOIC
- ECAD Model:
-
- Datasheet:
- FDS6930A
Fairchild/ON Semiconductor FDS6930A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6930A.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight187mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance40mOhm
- Terminal FinishTin (Sn)
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- Max Power Dissipation900mW
- Terminal FormGULL WING
- Current Rating5.5A
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time5 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs40m Ω @ 5.5A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds460pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs7nC @ 5V
- Rise Time8ns
- Fall Time (Typ)13 ns
- Turn-Off Delay Time17 ns
- Continuous Drain Current (ID)5.5A
- Threshold Voltage1.5V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)4.6A
- Drain to Source Breakdown Voltage30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDS6930A Description
These N-channel logic level MOSFET are manufactured using an advanced PowerTrress process that is customized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDS6930A Features 5.5 A, 30 V RDS(ON) = 0.040 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge (typical 5 nC). High performance trench technology for extremely low RDS(ON). High power and current handling capability.
FDS6930A Applications
This product is general usage and suitable for many different applications.
These N-channel logic level MOSFET are manufactured using an advanced PowerTrress process that is customized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDS6930A Features 5.5 A, 30 V RDS(ON) = 0.040 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge (typical 5 nC). High performance trench technology for extremely low RDS(ON). High power and current handling capability.
FDS6930A Applications
This product is general usage and suitable for many different applications.
FDS6930A More Descriptions
Transistor MOSFET Array Dual N-CH 30V 5.5A 8-Pin SOIC T/R - Tape and Reel
Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 5.5A, 40mΩ
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5.5A; On Resistance, Rds(on):0.04ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
MOSFET, N, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 5.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 20A; SMD Marking: FDS6930A; Termination Type: Surface Mount Device; Voltage Vds: 30V; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.5V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Min: 1V
Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 5.5A, 40mΩ
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5.5A; On Resistance, Rds(on):0.04ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
MOSFET, N, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 5.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 20A; SMD Marking: FDS6930A; Termination Type: Surface Mount Device; Voltage Vds: 30V; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.5V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Min: 1V
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