Fairchild/ON Semiconductor FDS6898AZ

Name: FDS6898AZ
Brand: Fairchild/ON Semiconductor
SKU: 2473539-FDS6898AZ
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS6898AZ

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2473539-FDS6898AZ

Description:: MOSFET 2N-CH 20V 9.4A 8SOIC

ECAD Model:

Datasheet:: FDS6898AZ

Specifications

Fairchild/ON Semiconductor FDS6898AZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6898AZ.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
187mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
14MOhm
Additional Feature
ESD PROTECTED
Subcategory
FET General Purpose Power
Voltage - Rated DC
20V
Max Power Dissipation
2W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
9.4A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Turn On Delay Time
10 ns
Power - Max
900mW
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
14m Ω @ 9.4A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1821pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
23nC @ 4.5V
Rise Time
15ns
Fall Time (Typ)
16 ns
Turn-Off Delay Time
34 ns
Continuous Drain Current (ID)
9.4A
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
20V
Dual Supply Voltage
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
1 V
Height
1.5mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDS6898AZ Description
These N-channel logic level MOSFET use Fairchild Semiconductor's advanced Powerlrannch process tailored to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDS6898AZ Features
·9.4A20 V Ros(ON)=14mΩ@Vgs=4.5V Rps(on)=18mΩ@Vgs=2.5V ·Low gate charge(16 nC typical) .ESD protection diode(note 3) .High performance trench technology for extremely low RosON) High power and current handling capability FDS6898AZ Applications low-voltage applications battery-powered applications

FDS6898AZ More Descriptions

Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ
Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel
Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet -SOIC-8
20V 9.4A 14m´Î@4.5V9.4A 900mW 1.5V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS
MOSFET, NN; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:9.4A; Current Id Max:9.4A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):14mohm; Package / Case:SO-8; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Certification