Fairchild/ON Semiconductor FDMS9600S

Name: FDMS9600S
Brand: Fairchild/ON Semiconductor
SKU: 3069642-FDMS9600S
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMS9600S

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3069642-FDMS9600S

Description:: MOSFET 2N-CH 30V 12A/16A POWER56

ECAD Model:

Datasheet:: FDMS9600S

Specifications

Fairchild/ON Semiconductor FDMS9600S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS9600S.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
16 Weeks
Contact Plating
Gold
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Number of Pins
8
Weight
9mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2017
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
13MOhm
Subcategory
FET General Purpose Power
Max Power Dissipation
1W
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Case Connection
DRAIN
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
8.5m Ω @ 12A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1705pF @ 15V
Current - Continuous Drain (Id) @ 25°C
12A 16A
Gate Charge (Qg) (Max) @ Vgs
13nC @ 4.5V
Rise Time
11ns
Fall Time (Typ)
32 ns
Turn-Off Delay Time
54 ns
Continuous Drain Current (ID)
16A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Feedback Cap-Max (Crss)
375 pF
Height
825μm
Length
5mm
Width
6mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDMS9600S Description
The device includes two specialized MOSET in a unique Dual Power 56 package. It is designed to provide the best synchronous step-down power supply phase in terms of efficiency and PCB utilization. "low switching loss" High side MOSFET realized by "low side" SyncFET with low conduction loss. FDMS9600S Features
Q1:N-Channel Max rps(on)=8.5m|?at VGs=10V￡?1o=12A Max rps(on)=12.4m|?at VGs=4.5Vlp=10A Q2:N-Channel Max rps(on)=5.5m|?atVGs=10V￡?Io=16A Max rps(on)=7.0m|? at VGs=4.5V￡?lD=14A Low Qg high side MOSFET Low rps(on) low side MOSFET Thermally efficient dual Power 56 package Pinout optimized for simple PCB design RoHS Compliant FDMS9600S Applications
step-down power supply

FDMS9600S More Descriptions

Transistor MOSFET Array Dual N-CH 30V 32A/30A 8-Pin Power 56 T/R
Dual N-Channel 30 V 13 mOhm Surface Mount PowerTrench Mosfet - Power 56
MOSFET, DUAL N-CH, 30V, 32A, 2.5W; Available until stocks are exhausted
This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization. The low switching loss high-side MOSFET is complemented by a low conduction loss low-side SyncFET™.

Certification