Fairchild/ON Semiconductor FDMS8090
- Part Number:
- FDMS8090
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2473708-FDMS8090
- Description:
- MOSFET 2N-CH 100V 10A PWR56
- Datasheet:
- FDMS8090
Fairchild/ON Semiconductor FDMS8090 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8090.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Number of Pins8
- Weight250mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2017
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- SubcategoryFET General Purpose Power
- Max Power Dissipation2.2W
- JESD-30 CodeR-PDSO-N4
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation59W
- Case ConnectionDRAIN
- Turn On Delay Time10.6 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs13m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1800pF @ 50V
- Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
- Rise Time4.6ns
- Drain to Source Voltage (Vdss)100V
- Fall Time (Typ)4 ns
- Turn-Off Delay Time17.4 ns
- Continuous Drain Current (ID)10A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)40A
- Drain-source On Resistance-Max0.013Ohm
- Drain to Source Breakdown Voltage100V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height750μm
- Length5mm
- Width6mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMS8090 Description
This device includes two fast switching (Qgd minimized) 100V N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) package. The package is enhanced for exceptional thermal performance.
FDMS8090 Features
Max rDS(on) = 13 m|? at VGS = 10 V, ID = 10 A
Max rDS(on) = 20 m|? at VGS = 6 V, ID = 8 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
100% UIL tested
RoHS Compliant
FDMS8090 Applications
DC-DC Merchant Power Supply
FDMS8090 Applications
DC-DC Merchant Power Supply
FDMS8090 More Descriptions
100V Symmetrical Dual N-Channel PowerTrench® MOSFET 40A, 13mΩ
Transistor MOSFET Array Dual N-CH 100V 40A 8-Pin Power 56 T/R
This device includes two fast switching (Qgd minimized) 100V N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) package. The package is enhanced for exceptional thermal performance.
MOSFET, N-CH, 100V, 10A, WDFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.013ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 2.2W; Transistor Case Style: WDFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor MOSFET Array Dual N-CH 100V 40A 8-Pin Power 56 T/R
This device includes two fast switching (Qgd minimized) 100V N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) package. The package is enhanced for exceptional thermal performance.
MOSFET, N-CH, 100V, 10A, WDFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.013ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 2.2W; Transistor Case Style: WDFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
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