FDMS8090

Fairchild/ON Semiconductor FDMS8090

Part Number:
FDMS8090
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2473708-FDMS8090
Description:
MOSFET 2N-CH 100V 10A PWR56
ECAD Model:
Datasheet:
FDMS8090

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Specifications
Fairchild/ON Semiconductor FDMS8090 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8090.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    4 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    250mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2017
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    2.2W
  • JESD-30 Code
    R-PDSO-N4
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    59W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    10.6 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    13m Ω @ 10A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1800pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    27nC @ 10V
  • Rise Time
    4.6ns
  • Drain to Source Voltage (Vdss)
    100V
  • Fall Time (Typ)
    4 ns
  • Turn-Off Delay Time
    17.4 ns
  • Continuous Drain Current (ID)
    10A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    40A
  • Drain-source On Resistance-Max
    0.013Ohm
  • Drain to Source Breakdown Voltage
    100V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Height
    750μm
  • Length
    5mm
  • Width
    6mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDMS8090               Description   This device includes two fast switching (Qgd minimized) 100V N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) package. The package is enhanced for exceptional thermal performance.   FDMS8090                      Features   Max rDS(on) = 13 m|? at VGS = 10 V, ID = 10 A Max rDS(on) = 20 m|? at VGS = 6 V, ID = 8 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing 100% UIL tested RoHS Compliant
FDMS8090                  Applications
DC-DC Merchant Power Supply  




FDMS8090 More Descriptions
100V Symmetrical Dual N-Channel PowerTrench® MOSFET 40A, 13mΩ
Transistor MOSFET Array Dual N-CH 100V 40A 8-Pin Power 56 T/R
This device includes two fast switching (Qgd minimized) 100V N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) package. The package is enhanced for exceptional thermal performance.
MOSFET, N-CH, 100V, 10A, WDFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.013ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 2.2W; Transistor Case Style: WDFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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