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FDMS7608S

Fairchild/ON Semiconductor FDMS7608S

Part Number:
FDMS7608S
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2847684-FDMS7608S
Description:
MOSFET 2N-CH 30V 12A/15A 8-PQFN
ECAD Model:
Datasheet:
FDMS7608S

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Specifications
Fairchild/ON Semiconductor FDMS7608S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS7608S.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    226mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2017
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    10MOhm
  • Terminal Finish
    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    2.5W
  • JESD-30 Code
    R-PDSO-N6
  • Output Voltage
    30V
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Output Current
    22A
  • Case Connection
    DRAIN SOURCE
  • Turn On Delay Time
    7 ns
  • Power - Max
    1W
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    10m Ω @ 12A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1510pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    12A 15A
  • Gate Charge (Qg) (Max) @ Vgs
    24nC @ 10V
  • Rise Time
    10ns
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    15A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    30A
  • Drain to Source Breakdown Voltage
    30V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Drivers
    2
  • FET Feature
    Logic Level Gate
  • Feedback Cap-Max (Crss)
    65 pF
  • Height
    725μm
  • Length
    5mm
  • Width
    6mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDMS7608S Description
In a twin MLP package, this device contains two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.

FDMS7608S Features
At VGS = 10 V and lD = 12 A, the maximum r??s(on) is md.
Maximum ros(on) = 13.6 mQ at 4.5 V, lD = 10 A Q2: N-Channel
Maximum r??g(on) is 6.3 mil at 10 V and 15 A for Vgs.
Maximum rDS(on) is 7.2 mQ at 4.5 V and 13 A.
REACH Compliant

FDMS7608S Applications
Computing
Communications
Point of Load for General Purpose
VCORE Notebook
FDMS7608S More Descriptions
Transistor MOSFET Array Dual N-CH 30V 22A/30A 8-Pin Power 56 T/R - Tape and Reel
Dual N-Channel 30 V 10/6.3 mOhm Surface Mount PowerTrench® Mosfet - Power56
Trans MOSFET N-CH Si 30V 12A/15A 8-Pin DFN EP T/R
Dual N-Channel PowerTrench® MOSFET 30V
TAPE REEL/PT7 Nch 30/20V & PT8 Nch 30/20V in PQFN5x6 Dual
MOSFET 2N-CH 30V 12A/15A POWER56
Small Signal Field-Effect Transistor, 12A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Standard LEDs - SMD Grn/Red 350/230mcd 525/630nm Water Clr
French Electronic Distributor since 1988
This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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