Fairchild/ON Semiconductor FDMS7602S
- Part Number:
- FDMS7602S
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2473668-FDMS7602S
- Description:
- MOSFET 2N-CH 30V 12A/17A POWER56
- Datasheet:
- FDMS7602S
Fairchild/ON Semiconductor FDMS7602S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS7602S.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time16 Weeks
- Contact PlatingGold
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Number of Pins8
- Weight211mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance7.5MOhm
- SubcategoryFET General Purpose Power
- Max Power Dissipation2.5W
- JESD-30 CodeR-PDSO-N6
- Number of Elements2
- Operating ModeENHANCEMENT MODE
- Power Dissipation1W
- Case ConnectionDRAIN SOURCE
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5m Ω @ 12A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1750pF @ 15V
- Current - Continuous Drain (Id) @ 25°C12A 17A
- Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
- Rise Time3.8ns
- Fall Time (Typ)3.2 ns
- Turn-Off Delay Time27 ns
- Continuous Drain Current (ID)17A
- Threshold Voltage1.8V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)40A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Nominal Vgs1.8 V
- Height700μm
- Length5mm
- Width6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMS7602S Description
Two specialized N-Channel MOSFETs are contained in a twin MLP package in this device. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. In order to offer the best power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been constructed.
FDMS7602S Features
Max DS(on) = 7.5 mQ at 10 V, Vgg, and 12 A
Max DS(on) = 12 mQ at 4.5 V VGS, 10 A lD Q2: N-Channel
Max DS(on) = 5.0 mQ at 10 V VGS and 17 A lD
Maximum rDs(on) is 6.8 mQ at 4.5 V, lD, and VGS.
FDMS7602S Applications
Computing
Communications
Point of Load for General Purpose
Two specialized N-Channel MOSFETs are contained in a twin MLP package in this device. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. In order to offer the best power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been constructed.
FDMS7602S Features
Max DS(on) = 7.5 mQ at 10 V, Vgg, and 12 A
Max DS(on) = 12 mQ at 4.5 V VGS, 10 A lD Q2: N-Channel
Max DS(on) = 5.0 mQ at 10 V VGS and 17 A lD
Maximum rDs(on) is 6.8 mQ at 4.5 V, lD, and VGS.
FDMS7602S Applications
Computing
Communications
Point of Load for General Purpose
FDMS7602S More Descriptions
Transistor MOSFET Array Dual N-CH 30V 30A 8-Pin Power 56 T/R - Tape and Reel
DUAL N CH MOSFET, POWERTRENCH, 30V, 30A,; DUAL N CH MOSFET, POWERTRENCH, 30V, 30A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:30A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0075ohm
This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
DUAL N CH MOSFET, POWERTRENCH, 30V, 30A,; DUAL N CH MOSFET, POWERTRENCH, 30V, 30A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:30A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0075ohm
This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
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