FDMS7602S

Fairchild/ON Semiconductor FDMS7602S

Part Number:
FDMS7602S
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2473668-FDMS7602S
Description:
MOSFET 2N-CH 30V 12A/17A POWER56
ECAD Model:
Datasheet:
FDMS7602S

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Specifications
Fairchild/ON Semiconductor FDMS7602S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS7602S.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    16 Weeks
  • Contact Plating
    Gold
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    211mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    7.5MOhm
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    2.5W
  • JESD-30 Code
    R-PDSO-N6
  • Number of Elements
    2
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1W
  • Case Connection
    DRAIN SOURCE
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7.5m Ω @ 12A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1750pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    12A 17A
  • Gate Charge (Qg) (Max) @ Vgs
    28nC @ 10V
  • Rise Time
    3.8ns
  • Fall Time (Typ)
    3.2 ns
  • Turn-Off Delay Time
    27 ns
  • Continuous Drain Current (ID)
    17A
  • Threshold Voltage
    1.8V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    40A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    1.8 V
  • Height
    700μm
  • Length
    5mm
  • Width
    6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDMS7602S Description
Two specialized N-Channel MOSFETs are contained in a twin MLP package in this device. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. In order to offer the best power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been constructed.

FDMS7602S Features
Max DS(on) = 7.5 mQ at 10 V, Vgg, and 12 A
Max DS(on) = 12 mQ at 4.5 V VGS, 10 A lD Q2: N-Channel
Max DS(on) = 5.0 mQ at 10 V VGS and 17 A lD
Maximum rDs(on) is 6.8 mQ at 4.5 V, lD, and VGS.

FDMS7602S Applications
Computing
Communications
Point of Load for General Purpose
FDMS7602S More Descriptions
Transistor MOSFET Array Dual N-CH 30V 30A 8-Pin Power 56 T/R - Tape and Reel
DUAL N CH MOSFET, POWERTRENCH, 30V, 30A,; DUAL N CH MOSFET, POWERTRENCH, 30V, 30A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:30A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0075ohm
This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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