Fairchild/ON Semiconductor FDMS7600AS
- Part Number:
- FDMS7600AS
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3554010-FDMS7600AS
- Description:
- MOSFET 2N-CH 30V 12A/22A POWER56
- ECAD Model:
-
- Datasheet:
- FDMS7600AS
Fairchild/ON Semiconductor FDMS7600AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS7600AS.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Number of Pins8
- Weight211mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- SubcategoryFET General Purpose Power
- Max Power Dissipation1W
- Terminal FormFLAT
- JESD-30 CodeR-PDSO-F6
- Number of Elements2
- Operating ModeENHANCEMENT MODE
- Power Dissipation1W
- Case ConnectionSOURCE
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5m Ω @ 12A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1750pF @ 15V
- Current - Continuous Drain (Id) @ 25°C12A 22A
- Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
- Rise Time7.6ns
- Fall Time (Typ)5.2 ns
- Turn-Off Delay Time45 ns
- Continuous Drain Current (ID)40A
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0075Ohm
- Drain to Source Breakdown Voltage30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Nominal Vgs1 V
- Height700μm
- Length5mm
- Width6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMS7600AS Description
The device includes two specialized N-channel MOSFET in a dual MLP package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.
FDMS7600AS Features Q1: N-Channel Max. RDS(on) = 7.5 m|? at VGS = 10 V, ID = 12 A Max. RDS(on) = 12 m|? at VGS = 4.5 V, ID = 10 A Q2: N-Channel Max. RDS(on) = 2.8 m|? at VGS = 10 V, ID = 20 A Max. RDS(on) = 3.3 m|? at VGS = 4.5 V, ID = 18 A RoHS Compliant
FDMS7600AS Applications
This product is general usage and suitable for many different applications.
The device includes two specialized N-channel MOSFET in a dual MLP package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.
FDMS7600AS Features Q1: N-Channel Max. RDS(on) = 7.5 m|? at VGS = 10 V, ID = 12 A Max. RDS(on) = 12 m|? at VGS = 4.5 V, ID = 10 A Q2: N-Channel Max. RDS(on) = 2.8 m|? at VGS = 10 V, ID = 20 A Max. RDS(on) = 3.3 m|? at VGS = 4.5 V, ID = 18 A RoHS Compliant
FDMS7600AS Applications
This product is general usage and suitable for many different applications.
FDMS7600AS More Descriptions
Transistor MOSFET Array Dual N-CH 30V 30A/40A 8-Pin Power 56 T/R
MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:22A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0022ohm; Rds(on) Test Voltage Vgs:10V
This device includes two specialized N-Channel MOSFETs in a dual-MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:22A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0022ohm; Rds(on) Test Voltage Vgs:10V
This device includes two specialized N-Channel MOSFETs in a dual-MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
14 December 2023
AT24C256 EEPROM Features, Functions, Working Principle, Applications and AT24C256 vs 24LC256
Ⅰ. What is programmable read-only memory?Ⅱ. Overview of AT24C256 EEPROMⅢ. Pin configuration of AT24C256 EEPROMⅣ. What are the features of AT24C256 EEPROM?Ⅴ. Functions of AT24C256 EEPROMⅥ. Working principle... -
14 December 2023
An Introduction to the A3144 Magnetic Hall Effect Sensor
Ⅰ. What is a Hall sensor?Ⅱ. Overview of A3144 Hall effect sensorⅢ. Manufacturer of A3144 Hall effect sensorⅣ. What are the features of A3144 Hall effect sensor?Ⅴ. Pin... -
15 December 2023
Introduction to the Use of Operational Amplifier Circuit Based on LM324
Ⅰ. Overview of LM324 operational amplifierⅡ. Four different packages of LM324 operational amplifierⅢ. Functions of LM324 operational amplifierⅣ. Maximum ratings of LM324 operational amplifierⅤ. Characteristics of LM324 operational... -
15 December 2023
A Comprehensive Guide to Harnessing the Power of the TDA7850 Audio Amplifier
Ⅰ. TDA7850 overviewⅡ. How does the TDA7850 perform in terms of sound quality?Ⅲ. Specifications of TDA7850 audio amplifierⅣ. Electrical characteristic curves of TDA7850 audio amplifierⅤ. What kind of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.