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FDMS3664S

Fairchild/ON Semiconductor FDMS3664S

Part Number:
FDMS3664S
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3585724-FDMS3664S
Description:
MOSFET 2N-CH 30V 13A/25A 8-PQFN
ECAD Model:
Datasheet:
FDMS3664S

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Specifications
Fairchild/ON Semiconductor FDMS3664S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS3664S.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    171mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    1W
  • Terminal Form
    FLAT
  • JESD-30 Code
    R-PDSO-F6
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Case Connection
    DRAIN SOURCE
  • Turn On Delay Time
    7.7 ns
  • FET Type
    2 N-Channel (Dual) Asymmetrical
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8m Ω @ 13A, 10V
  • Vgs(th) (Max) @ Id
    2.7V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1765pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    13A 25A
  • Gate Charge (Qg) (Max) @ Vgs
    29nC @ 10V
  • Turn-Off Delay Time
    19 ns
  • Continuous Drain Current (ID)
    25A
  • Gate to Source Voltage (Vgs)
    12V
  • Drain Current-Max (Abs) (ID)
    13A
  • Drain to Source Breakdown Voltage
    30V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Feedback Cap-Max (Crss)
    70 pF
  • Height
    1.1mm
  • Length
    5mm
  • Width
    5.9mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDMS3664S Description
This device is a twin MLP package containing two specialized N-Channel MOSFETs. The switch node has been internally connected to facilitate the insertion and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been built to provide the best power efficiency.

FDMS3664S Features
At 10 V, Vgg, and 12 A, the maximum DS(on) is 7.5 mQ.
Max DS(on) = 12 mQ at 4.5 V VGS and 10 A lD Q2: N-Channel
At 10 V VGS and 17 A lD, Max DS(on) = 5.0 mQ.
6.8 mQ is the maximum rDs(on) at 4.5 V, lD, and VGS.

FDMS3664S Applications
Computing
Communications
General Purpose Point of Load
FDMS3664S More Descriptions
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
Trans MOSFET Array Dual N-CH 30V 30A/60A 8-Pin Power 56 T/R - Tape and Reel
Dual N-Channel 30 V 11/4.5 mOhm 13/24 nC 2.2/2.5 W PowerTrench Mosfet POWER 56-8
Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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