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FDMS3660S

Fairchild/ON Semiconductor FDMS3660S

Part Number:
FDMS3660S
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2474329-FDMS3660S
Description:
MOSFET 2N-CH 30V 13A/30A 8-PQFN
ECAD Model:
Datasheet:
FDMS3660S

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Specifications
Fairchild/ON Semiconductor FDMS3660S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS3660S.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    13 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    171mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    2.5W
  • Terminal Form
    FLAT
  • Base Part Number
    FDMS3660S
  • JESD-30 Code
    R-PDSO-F6
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Case Connection
    DRAIN SOURCE
  • Turn On Delay Time
    7.7 ns
  • Power - Max
    1W
  • FET Type
    2 N-Channel (Dual) Asymmetrical
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8m Ω @ 13A, 10V
  • Vgs(th) (Max) @ Id
    2.7V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1765pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    30A 60A
  • Gate Charge (Qg) (Max) @ Vgs
    29nC @ 10V
  • Turn-Off Delay Time
    19 ns
  • Continuous Drain Current (ID)
    30A
  • Threshold Voltage
    1.5V
  • Gate to Source Voltage (Vgs)
    12V
  • Drain Current-Max (Abs) (ID)
    13A
  • Drain to Source Breakdown Voltage
    30V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    1.5 V
  • Feedback Cap-Max (Crss)
    70 pF
  • Height
    1.1mm
  • Length
    5mm
  • Width
    5.9mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDMS3660S          Description    The device includes two dedicated N-channel MOSFET in a dual PQFN package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. Control MOSFET (Q1) and synchronous synchronous FET (Q2) are designed to provide optimal power efficiency.  
FDMS3660S             Features
Q1: N?Channel ? Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A ? Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 A Q2: N?Channel ? Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A ? Max rDS(on) = 2.2 m at VGS = 4.5 V, ID = 27 A ? Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses ? MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing ? These Devices are Pb?Free and are RoHS Compliant
FDMS3660S          Applications
? Computing ? Communications ? General Purpose Point of Load ? Notebook VCORE    



FDMS3660S More Descriptions
Transistor MOSFET Array Dual N-CH 30V 60A/145A 8-Pin Power 56 T/RAvnet Japan
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
Dual N-Channel 30 V 8 /1.8 mO 21 / 62 nC PowerTrench Asymmetric Mosfet - Power56
Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
MOSFET, DUAL N CH, 30V, 60A, POWER 56-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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