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FDMS3660AS

Fairchild/ON Semiconductor FDMS3660AS

Part Number:
FDMS3660AS
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2847670-FDMS3660AS
Description:
MOSFET 2N-CH 30V 13A/30A 8QFN
ECAD Model:
Datasheet:
FDMS3660AS

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Specifications
Fairchild/ON Semiconductor FDMS3660AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS3660AS.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    171mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2017
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    2.5W
  • Terminal Form
    FLAT
  • JESD-30 Code
    R-PDSO-F6
  • Number of Elements
    2
  • Configuration
    SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Case Connection
    DRAIN SOURCE
  • Power - Max
    1W
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8m Ω @ 13A, 10V
  • Vgs(th) (Max) @ Id
    2.7V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2230pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    13A 30A
  • Gate Charge (Qg) (Max) @ Vgs
    30nC @ 10V
  • Rise Time
    5ns
  • Fall Time (Typ)
    5 ns
  • Turn-Off Delay Time
    38 ns
  • Continuous Drain Current (ID)
    30A
  • JEDEC-95 Code
    MO-240AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    13A
  • Drain to Source Breakdown Voltage
    30V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Feedback Cap-Max (Crss)
    70 pF
  • Height
    1.1mm
  • Length
    5mm
  • Width
    5.9mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDMS3660AS Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet FDMS3660AS or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FDMS3660AS. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
FDMS3660AS More Descriptions
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
Dual N-Channel 30 V 11/2.2 mOhm 30/90 nC 2.2/2.5 W Mosfet - POWER 56-8
Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
PMIC - Voltage Regulators - DC DC Switching Regulators 3 (168 Hours) Tape & Reel (TR) 17 Weeks Matte Tin (Sn) SWITCHING REGULATOR IC REG NOTEBOOK BI-DIR VR 4X4 T
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET™ (Q2) have been designed to provide optimal power efficiency.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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