Fairchild/ON Semiconductor FDMS3606S
- Part Number:
- FDMS3606S
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3069682-FDMS3606S
- Description:
- MOSFET 2N-CH 30V 13A/27A PWR56
- ECAD Model:
-
- Datasheet:
- FDMS3606S
Fairchild/ON Semiconductor FDMS3606S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS3606S.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight171mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Max Power Dissipation1W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-F6
- Number of Elements2
- Number of Channels2
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN SOURCE
- Turn On Delay Time15 ns
- FET Type2 N-Channel (Dual) Asymmetrical
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8m Ω @ 13A, 10V
- Vgs(th) (Max) @ Id2.7V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1785pF @ 15V
- Current - Continuous Drain (Id) @ 25°C13A 27A
- Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
- Rise Time5.5ns
- Fall Time (Typ)3.4 ns
- Turn-Off Delay Time36 ns
- Continuous Drain Current (ID)27A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)13A
- Drain to Source Breakdown Voltage30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height1mm
- Length6mm
- Width5mm
- RoHS StatusROHS3 Compliant
FDMS3606S Description
The device includes two dedicated N-channel MOSFET in a dual PQFN package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. Control MOSFET (Q1) and synchronous SyncFET (Q2) are designed to provide optimal power efficiency.
FDMS3606S Features Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing RoHS Compliant FDMS3606S Applications
Notebook PC
The device includes two dedicated N-channel MOSFET in a dual PQFN package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. Control MOSFET (Q1) and synchronous SyncFET (Q2) are designed to provide optimal power efficiency.
FDMS3606S Features Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing RoHS Compliant FDMS3606S Applications
Notebook PC
FDMS3606S More Descriptions
Transistor MOSFET Array Dual N-CH 30V 60A/148A 8-Pin PQFN T/R - Tape and Reel
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
Dual N-Channel 30 V 11/2.8 mOhm 29/83 nC 2.2/2.5 W Mosfet - POWER 56-8
Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
Dual N-Channel 30 V 11/2.8 mOhm 29/83 nC 2.2/2.5 W Mosfet - POWER 56-8
Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
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