Fairchild/ON Semiconductor FDMS3600S

Name: FDMS3600S
Brand: Fairchild/ON Semiconductor
SKU: 2473405-FDMS3600S
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMS3600S

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2473405-FDMS3600S

Description:: MOSFET 2N-CH 25V 15A/30A 8-PQFN

ECAD Model:

Datasheet:: FDMS3600S

Specifications

Fairchild/ON Semiconductor FDMS3600S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS3600S.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
13 Weeks
Mount
Surface Mount
Number of Pins
8
Weight
171mg
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Subcategory
FET General Purpose Power
Max Power Dissipation
1W
Terminal Position
QUAD
JESD-30 Code
R-PQFP-N7
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Case Connection
DRAIN SOURCE
Transistor Application
SWITCHING
Rise Time
5.3ns
Drain to Source Voltage (Vdss)
25V
Polarity/Channel Type
N-CHANNEL
Fall Time (Typ)
3.9 ns
Turn-Off Delay Time
38 ns
Continuous Drain Current (ID)
30A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
15A
Drain to Source Breakdown Voltage
25V
Input Capacitance
1.68nF
FET Technology
METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance
1.6mOhm
Rds On Max
5.6 mΩ
Nominal Vgs
1.8 V
Feedback Cap-Max (Crss)
90 pF
Height
1.05mm
Length
5mm
Width
6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

FDMS3600S Description
In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.

FDMS3600S Features
Maximum RDS(on) at VGS = 10 V, ID = 30 A is 1.6 m.
At VGS = 4.5 V, ID = 25 A, the maximum RDS(on) is 2.4 m.
Reduced rise/fall periods due to reduced inductance packing reduce switching losses.
Optimal designing for lower circuit inductance and less switch node ringing is made possible by MOSFET integration.
Conforms to RoHS

FDMS3600S Applications
Notebook PC

FDMS3600S More Descriptions

Transistor MOSFET Array Dual N-CH 25V 65A/155A 8-Pin Power 56 T/R - Tape and Reel
Asymmetric Dual N-Channel MOSFET PowerTrench® Power Stage, 25V
DUAL N CH MOSFET, POWERTRENCH, 25V, 40A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:30A; Drain Source Voltage Vds, N Channel:25V; On Resistance Rds(on), N Channel:0.0013ohm
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
MOSFET, NN CH, ASYMMETRIC, 25V, POWER56; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Certification