ON Semiconductor EMG2DXV5T5G
- Part Number:
- EMG2DXV5T5G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2844603-EMG2DXV5T5G
- Description:
- TRANS 2NPN PREBIAS 0.23W SOT553
- Datasheet:
- EMG2DXV5T5G
ON Semiconductor EMG2DXV5T5G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor EMG2DXV5T5G.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time17 Weeks
- Mounting TypeSurface Mount
- Package / CaseSOT-553
- Surface MountYES
- Number of Pins5
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation230mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberEMG
- Pin Count5
- Qualification StatusNot Qualified
- Number of Elements2
- PolarityNPN
- ConfigurationCOMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Power Dissipation230mW
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Collector Emitter Saturation Voltage250mV
- Emitter Base Voltage (VEBO)6V
- hFE Min80
- Resistor - Base (R1)47k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)47k Ω
- Height600μm
- Length1.7mm
- Width1.3mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
EMG2DXV5T5G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMG2DXV5T5G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMG2DXV5T5G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMG2DXV5T5G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMG2DXV5T5G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
EMG2DXV5T5G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Dual NPN Bipolar Digital Transistor (BRT)
Trans Digital BJT NPN 50V 100mA 338mW 5-Pin SOT-553 T/R
ON SEMICONDUCTOR - EMG2DXV5T5G - BRT TRANSISTOR, 50V, 47K/47KOHM, SOT-553, FULL REEL
Dual NPN Bipolar Digital Transistor (BRT)
Trans Digital BJT NPN 50V 100mA 338mW 5-Pin SOT-553 T/R
ON SEMICONDUCTOR - EMG2DXV5T5G - BRT TRANSISTOR, 50V, 47K/47KOHM, SOT-553, FULL REEL
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