EMG2DXV5T5G

ON Semiconductor EMG2DXV5T5G

Part Number:
EMG2DXV5T5G
Manufacturer:
ON Semiconductor
Ventron No:
2844603-EMG2DXV5T5G
Description:
TRANS 2NPN PREBIAS 0.23W SOT553
ECAD Model:
Datasheet:
EMG2DXV5T5G

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
ON Semiconductor EMG2DXV5T5G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor EMG2DXV5T5G.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    17 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-553
  • Surface Mount
    YES
  • Number of Pins
    5
  • Packaging
    Tape & Reel (TR)
  • Published
    2010
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT-IN BIAS RESISTOR RATIO IS 1
  • Subcategory
    BIP General Purpose Small Signal
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    230mW
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    100mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    EMG
  • Pin Count
    5
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Polarity
    NPN
  • Configuration
    COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
  • Power Dissipation
    230mW
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Collector Emitter Saturation Voltage
    250mV
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    80
  • Resistor - Base (R1)
    47k Ω
  • Continuous Collector Current
    100mA
  • Resistor - Emitter Base (R2)
    47k Ω
  • Height
    600μm
  • Length
    1.7mm
  • Width
    1.3mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
EMG2DXV5T5G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMG2DXV5T5G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMG2DXV5T5G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
EMG2DXV5T5G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Dual NPN Bipolar Digital Transistor (BRT)
Trans Digital BJT NPN 50V 100mA 338mW 5-Pin SOT-553 T/R
ON SEMICONDUCTOR - EMG2DXV5T5G - BRT TRANSISTOR, 50V, 47K/47KOHM, SOT-553, FULL REEL
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.