ON Semiconductor EMG2DXV5T5
- Part Number:
- EMG2DXV5T5
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3068512-EMG2DXV5T5
- Description:
- TRANS 2NPN PREBIAS 0.23W SOT553
- ECAD Model:
-
- Datasheet:
- EMG2DXV5T5
ON Semiconductor EMG2DXV5T5 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor EMG2DXV5T5.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-553
- Number of Pins5
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation230mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberEMG
- Pin Count5
- Qualification StatusNot Qualified
- Number of Elements2
- PolarityNPN
- ConfigurationCOMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Power Dissipation230mW
- Transistor ApplicationSWITCHING
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)250mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- hFE Min80
- Resistor - Base (R1)47k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)47k Ω
- RoHS StatusNon-RoHS Compliant
- Lead FreeLead Free
EMG2DXV5T5 Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMG2DXV5T5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMG2DXV5T5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMG2DXV5T5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMG2DXV5T5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
EMG2DXV5T5 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Dual NPN Bipolar Digital Transistor (BRT)
Tape & Reel (TR) Surface Mount 2NPN - Pre-Biased (Dual) COMMON EMITTER 2ELEMENTS WITH BUILT-IN RESISTOR Pre-Biased Bipolar Transistor (BJT) 80 @ 5mA 10V 100mA 230mW 50V
Dual NPN Bipolar Digital Transistor (BRT)
Tape & Reel (TR) Surface Mount 2NPN - Pre-Biased (Dual) COMMON EMITTER 2ELEMENTS WITH BUILT-IN RESISTOR Pre-Biased Bipolar Transistor (BJT) 80 @ 5mA 10V 100mA 230mW 50V
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