EMF5XV6T5G

ON Semiconductor EMF5XV6T5G

Part Number:
EMF5XV6T5G
Manufacturer:
ON Semiconductor
Ventron No:
2844676-EMF5XV6T5G
Description:
TRANS NPN PREBIAS/PNP SOT563
ECAD Model:
Datasheet:
EMF5XV6T5G

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Specifications
ON Semiconductor EMF5XV6T5G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor EMF5XV6T5G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    17 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Surface Mount
    YES
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    BUILT IN BIAS RESISTOR RATIO 1
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    500mW
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    100mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    EMF
  • Pin Count
    6
  • Operating Temperature (Max)
    150°C
  • Number of Elements
    2
  • Polarity
    NPN, PNP
  • Element Configuration
    Dual
  • Power Dissipation
    500mW
  • Halogen Free
    Halogen Free
  • Transistor Type
    1 NPN Pre-Biased, 1 PNP
  • Collector Emitter Voltage (VCEO)
    250mV
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA 10V / 270 @ 10mA 2V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300μA, 10mA / 250mV @ 10mA, 200mA
  • Collector Emitter Breakdown Voltage
    12V
  • Voltage - Collector Emitter Breakdown (Max)
    50V 12V
  • Current - Collector (Ic) (Max)
    100mA 500mA
  • Collector Emitter Saturation Voltage
    250mV
  • Max Breakdown Voltage
    12V
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    80
  • Resistor - Base (R1)
    47k Ω
  • Resistor - Emitter Base (R2)
    47k Ω
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
EMF5XV6T5G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMF5XV6T5G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMF5XV6T5G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
EMF5XV6T5G More Descriptions
Trans Digital BJT NPN/PNP 50V 100mA/500mA 500mW Automotive 6-Pin SOT-563 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Bipolar Transistors - BJT BRT Dual NPN & PNP
Trans GP BJT NPN 50V/12V 0.1A/0.5A 6-Pin SOT-563 T/R
Complementary Bipolar Digital Transistor (BRT)
Special-Purpose Transistor,50V V(Br)Ceo,100Ma I(C),sot-563 |Onsemi EMF5XV6T5G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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