Rohm Semiconductor EMF21T2R
- Part Number:
- EMF21T2R
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 3068548-EMF21T2R
- Description:
- TRANS NPN PREBIAS/PNP 0.15W EMT6
- Datasheet:
- EMF21, UMF21N
Rohm Semiconductor EMF21T2R technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor EMF21T2R.
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2003
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin/Copper (Sn/Cu)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTOR RATIO 1
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Max Power Dissipation150mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number*MF21
- Pin Count6
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Transistor Type1 NPN Pre-Biased, 1 PNP
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA 5V / 270 @ 10mA 2V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 500μA, 10mA / 250mV @ 10mA, 200mA
- Collector Emitter Breakdown Voltage12V
- Voltage - Collector Emitter Breakdown (Max)50V 12V
- Current - Collector (Ic) (Max)100mA 500mA
- Transition Frequency250MHz
- Max Breakdown Voltage12V
- Frequency - Transition250MHz 260MHz
- hFE Min30
- Resistor - Base (R1)10k Ω
- Resistor - Emitter Base (R2)10k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
EMF21T2R Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMF21T2R or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMF21T2R. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMF21T2R or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMF21T2R. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
EMF21T2R More Descriptions
Trans Digital BJT NPN/PNP 12V 100mA/500mA 6-Pin EMT T/R
0.1A I(C) 50V V(BR)CEO 2-Element NPN and PNP Silicon
TRANS NPN PREBIAS/PNP 0.15W EMT6
0.1A I(C) 50V V(BR)CEO 2-Element NPN and PNP Silicon
TRANS NPN PREBIAS/PNP 0.15W EMT6
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