Micron Technology Inc. EDB1316BDBH-1DIT-F-D
- Part Number:
- EDB1316BDBH-1DIT-F-D
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3720576-EDB1316BDBH-1DIT-F-D
- Description:
- IC SDRAM 1GBIT 533MHZ 134FBGA
- ECAD Model:
-
- Datasheet:
- EDB1316BDBH-1DIT-F-D
Micron Technology Inc. EDB1316BDBH-1DIT-F-D technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. EDB1316BDBH-1DIT-F-D.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case134-VFBGA
- Surface MountYES
- Operating Temperature-40°C~85°C TC
- PackagingBulk
- JESD-609 Codee1
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations134
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureSELF REFRESH; IT ALSO REQUIRES 1.8V NOM
- TechnologySDRAM - Mobile LPDDR2
- Voltage - Supply1.14V~1.95V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.2V
- Terminal Pitch0.65mm
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PBGA-B134
- Supply Voltage-Max (Vsup)1.3V
- Supply Voltage-Min (Vsup)1.14V
- Memory Size1Gb 64M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency533MHz
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization64MX16
- Memory Width16
- Memory Density1073741824 bit
- Access ModeSINGLE BANK PAGE BURST
- Height Seated (Max)1mm
- Length11.5mm
- Width10mm
- RoHS StatusROHS3 Compliant
EDB1316BDBH-1DIT-F-D Overview
The product being offered has a Moisture Sensitivity Level (MSL) of 3, which means it can withstand up to 168 hours of exposure to moisture without any damage. The Voltage - Supply range for this product is 1.14V~1.95V, ensuring a stable and reliable power supply. It can also withstand a peak reflow temperature of 260°C, making it suitable for high-temperature applications. The JESD-30 Code for this product is R-PBGA-B134, indicating its package type. With a Supply Voltage-Min (Vsup) of 1.14V, this product is energy-efficient. It has a Memory Width of 16 and a Memory Density of 1073741824 bit, providing ample storage capacity. The product has a compact design, with a length of 11.5mm and a width of 10mm. It is also environmentally friendly, as it is ROHS3 compliant.
EDB1316BDBH-1DIT-F-D Features
Package / Case: 134-VFBGA
Additional Feature:SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
EDB1316BDBH-1DIT-F-D Applications
There are a lot of Micron Technology Inc.
EDB1316BDBH-1DIT-F-D Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
The product being offered has a Moisture Sensitivity Level (MSL) of 3, which means it can withstand up to 168 hours of exposure to moisture without any damage. The Voltage - Supply range for this product is 1.14V~1.95V, ensuring a stable and reliable power supply. It can also withstand a peak reflow temperature of 260°C, making it suitable for high-temperature applications. The JESD-30 Code for this product is R-PBGA-B134, indicating its package type. With a Supply Voltage-Min (Vsup) of 1.14V, this product is energy-efficient. It has a Memory Width of 16 and a Memory Density of 1073741824 bit, providing ample storage capacity. The product has a compact design, with a length of 11.5mm and a width of 10mm. It is also environmentally friendly, as it is ROHS3 compliant.
EDB1316BDBH-1DIT-F-D Features
Package / Case: 134-VFBGA
Additional Feature:SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
EDB1316BDBH-1DIT-F-D Applications
There are a lot of Micron Technology Inc.
EDB1316BDBH-1DIT-F-D Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
EDB1316BDBH-1DIT-F-D More Descriptions
DRAM Chip Mobile LPDDR2 SDRAM 1Gbit 64Mx16 1.2V/1.8V 134-Pin FBGA Dry
IC DRAM 1GBIT PARALLEL 134VFBGA
Dram, 64M X 16Bit, -40 To 85Deg C; Dram Type:Lpddr2; Memory Configuration:64M X 16Bit; Clock Frequency Max:533Mhz; Ic Case/Package:Vfbga; No. Of Pins:134Pins; Supply Voltage Nom:1.2V; Ic Mounting:Surface Mount; Product Range:- Rohs Compliant: Yes |Micron EDB1316BDBH-1DIT-F-D
IC DRAM 1GBIT PARALLEL 134VFBGA
Dram, 64M X 16Bit, -40 To 85Deg C; Dram Type:Lpddr2; Memory Configuration:64M X 16Bit; Clock Frequency Max:533Mhz; Ic Case/Package:Vfbga; No. Of Pins:134Pins; Supply Voltage Nom:1.2V; Ic Mounting:Surface Mount; Product Range:- Rohs Compliant: Yes |Micron EDB1316BDBH-1DIT-F-D
The three parts on the right have similar specifications to EDB1316BDBH-1DIT-F-D.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityAccess ModeHeight Seated (Max)LengthWidthRoHS StatusSupplier Device PackageView Compare
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EDB1316BDBH-1DIT-F-D13 WeeksSurface Mount134-VFBGAYES-40°C~85°C TCBulke1Last Time Buy3 (168 Hours)134EAR99Tin/Silver/Copper (Sn/Ag/Cu)SELF REFRESH; IT ALSO REQUIRES 1.8V NOMSDRAM - Mobile LPDDR21.14V~1.95VBOTTOM26011.2V0.65mm30R-PBGA-B1341.3V1.14V1Gb 64M x 161VolatileSYNCHRONOUS533MHzDRAMParallel64MX16161073741824 bitSINGLE BANK PAGE BURST1mm11.5mm10mmROHS3 Compliant-- -
8 WeeksSurface Mount134-VFBGAYES-40°C~105°C TCTray-Last Time Buy3 (168 Hours)134EAR99-SELF REFRESH; IT ALSO REQUIRES 1.8V NOMSDRAM - Mobile LPDDR21.14V~1.95VBOTTOMNOT SPECIFIED11.2V0.65mmNOT SPECIFIEDR-PBGA-B1341.3V1.14V1Gb 64M x 161VolatileSYNCHRONOUS533MHzDRAMParallel64MX16161073741824 bitSINGLE BANK PAGE BURST1mm11.5mm10mmROHS3 Compliant-
-
-Surface Mount134-VFBGAYES-40°C~125°C TCTape & Reel (TR)-Last Time Buy3 (168 Hours)134EAR99--SDRAM - Mobile LPDDR21.14V~1.95VBOTTOM-11.8V0.65mm-R-PBGA-B1341.95V1.7V1Gb 32M x 321VolatileSYNCHRONOUS533MHzDRAMParallel64MX16161073741824 bitSINGLE BANK PAGE BURST1mm11.5mm10mmROHS3 Compliant-
-
8 WeeksSurface Mount134-VFBGA--40°C~125°C TCBulk-Active3 (168 Hours)----SDRAM - Mobile LPDDR21.14V~1.95V---------1Gb 64M x 16-Volatile-533MHzDRAMParallel-------ROHS3 Compliant134-VFBGA (10x11.5)
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