Micron Technology Inc. EDB1316BDBH-1DAUT-F-D
- Part Number:
- EDB1316BDBH-1DAUT-F-D
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3234228-EDB1316BDBH-1DAUT-F-D
- Description:
- IC SDRAM 1GBIT 533MHZ 134FBGA
- Datasheet:
- EDB1316BDBH-1DAUT-F-D
Micron Technology Inc. EDB1316BDBH-1DAUT-F-D technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. EDB1316BDBH-1DAUT-F-D.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case134-VFBGA
- Supplier Device Package134-VFBGA (10x11.5)
- Operating Temperature-40°C~125°C TC
- PackagingBulk
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySDRAM - Mobile LPDDR2
- Voltage - Supply1.14V~1.95V
- Memory Size1Gb 64M x 16
- Memory TypeVolatile
- Clock Frequency533MHz
- Memory FormatDRAM
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
EDB1316BDBH-1DAUT-F-D Overview
The mounting type for this product is surface mount, which allows for easy installation onto a circuit board. The package or case for this product is 134-VFBGA, providing a compact and efficient design for space-saving applications. The packaging for this product is bulk, meaning that it is shipped in large quantities without individual packaging. The moisture sensitivity level (MSL) for this product is 3, which indicates that it can withstand 168 hours of exposure to moisture without any negative effects. This product utilizes SDRAM technology, specifically mobile LPDDR2, which is commonly used in mobile devices. The voltage supply for this product ranges from 1.14V to 1.95V, providing a wide range of compatibility. With a memory size of 1Gb 64M x 16, this product offers ample storage capacity. The clock frequency for this product is 533MHz, ensuring fast and efficient performance. The memory format for this product is DRAM, which is a type of volatile memory commonly used in computers and other electronic devices. Additionally, this product is ROHS3 compliant, meaning it meets the strict environmental standards set by the Restriction of Hazardous Substances directive.
EDB1316BDBH-1DAUT-F-D Features
Package / Case: 134-VFBGA
EDB1316BDBH-1DAUT-F-D Applications
There are a lot of Micron Technology Inc.
EDB1316BDBH-1DAUT-F-D Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
The mounting type for this product is surface mount, which allows for easy installation onto a circuit board. The package or case for this product is 134-VFBGA, providing a compact and efficient design for space-saving applications. The packaging for this product is bulk, meaning that it is shipped in large quantities without individual packaging. The moisture sensitivity level (MSL) for this product is 3, which indicates that it can withstand 168 hours of exposure to moisture without any negative effects. This product utilizes SDRAM technology, specifically mobile LPDDR2, which is commonly used in mobile devices. The voltage supply for this product ranges from 1.14V to 1.95V, providing a wide range of compatibility. With a memory size of 1Gb 64M x 16, this product offers ample storage capacity. The clock frequency for this product is 533MHz, ensuring fast and efficient performance. The memory format for this product is DRAM, which is a type of volatile memory commonly used in computers and other electronic devices. Additionally, this product is ROHS3 compliant, meaning it meets the strict environmental standards set by the Restriction of Hazardous Substances directive.
EDB1316BDBH-1DAUT-F-D Features
Package / Case: 134-VFBGA
EDB1316BDBH-1DAUT-F-D Applications
There are a lot of Micron Technology Inc.
EDB1316BDBH-1DAUT-F-D Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
EDB1316BDBH-1DAUT-F-D More Descriptions
DRAM Chip Mobile LPDDR2 SDRAM 1Gbit 64Mx16 1.2V/1.8V 134-Pin FBGA Dry
IC DRAM 1GBIT PARALLEL 134VFBGA
LPDDR2 1G 64MX16 FBGA
IC DRAM LPDDR4 WFBGA
IC DRAM 1GBIT PARALLEL 134VFBGA
LPDDR2 1G 64MX16 FBGA
IC DRAM LPDDR4 WFBGA
The three parts on the right have similar specifications to EDB1316BDBH-1DAUT-F-D.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceRoHS StatusSurface MountJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Number of PortsOperating ModeOrganizationMemory WidthMemory DensityAccess ModeHeight Seated (Max)LengthWidthView Compare
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EDB1316BDBH-1DAUT-F-D8 WeeksSurface Mount134-VFBGA134-VFBGA (10x11.5)-40°C~125°C TCBulkActive3 (168 Hours)SDRAM - Mobile LPDDR21.14V~1.95V1Gb 64M x 16Volatile533MHzDRAMParallelROHS3 Compliant-------------------------
-
13 WeeksSurface Mount134-VFBGA--40°C~85°C TCBulkLast Time Buy3 (168 Hours)SDRAM - Mobile LPDDR21.14V~1.95V1Gb 64M x 16Volatile533MHzDRAMParallelROHS3 CompliantYESe1134EAR99Tin/Silver/Copper (Sn/Ag/Cu)SELF REFRESH; IT ALSO REQUIRES 1.8V NOMBOTTOM26011.2V0.65mm30R-PBGA-B1341.3V1.14V1SYNCHRONOUS64MX16161073741824 bitSINGLE BANK PAGE BURST1mm11.5mm10mm
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-Surface Mount134-VFBGA--30°C~85°C TCTape & Reel (TR)Active3 (168 Hours)SDRAM - Mobile LPDDR21.14V~1.95V1Gb 32M x 32Volatile533MHzDRAMParallelROHS3 Compliant------------------------
-
-Surface Mount134-VFBGA--40°C~125°C TCTape & Reel (TR)Last Time Buy3 (168 Hours)SDRAM - Mobile LPDDR21.14V~1.95V1Gb 32M x 32Volatile533MHzDRAMParallelROHS3 CompliantYES-134EAR99--BOTTOM-11.8V0.65mm-R-PBGA-B1341.95V1.7V1SYNCHRONOUS64MX16161073741824 bitSINGLE BANK PAGE BURST1mm11.5mm10mm
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