Diodes Incorporated DMP22D6UT-7

Name: DMP22D6UT-7
Brand: Diodes Incorporated
SKU: 2479221-DMP22D6UT-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMP22D6UT-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2479221-DMP22D6UT-7

Description:: MOSFET P-CH 20V 0.43A SOT-523

ECAD Model:

Datasheet:: DMP22D6UT-7

Specifications

Diodes Incorporated DMP22D6UT-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP22D6UT-7.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-523
Number of Pins
3
Weight
2.012816mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
150mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
150mW
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.1 Ω @ 430mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
175pF @ 16V
Current - Continuous Drain (Id) @ 25°C
430mA Ta
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Continuous Drain Current (ID)
430mA
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
-20V
Feedback Cap-Max (Crss)
20 pF
Height
750μm
Length
1.6mm
Width
800μm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

DMP22D6UT-7 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 175pF @ 16V.This device has a continuous drain current (ID) of [430mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-20V, the drain-source breakdown voltage is -20V.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (1.8V 4.5V).

DMP22D6UT-7 Features
a continuous drain current (ID) of 430mA
a drain-to-source breakdown voltage of -20V voltage
a 20V drain to source voltage (Vdss)

DMP22D6UT-7 Applications
There are a lot of Diodes Incorporated
DMP22D6UT-7 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

DMP22D6UT-7 More Descriptions

Mosfet, P-Ch, 20V, 0.43A, Sot-523 Rohs Compliant: Yes |Diodes Inc. DMP22D6UT-7
Single P-Channel 20 V 2.6 Ohm 150 mW Silicon Surface Mount Mosfet - SOT-523
Trans MOSFET P-CH 20V 0.43A Automotive 3-Pin SOT-523 T/R

Product Comparison

The three parts on the right have similar specifications to DMP22D6UT-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Feedback Cap-Max (Crss)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

JESD-30 Code

Case Connection

Turn On Delay Time

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Drain Current-Max (Abs) (ID)

Lead Free

Contact Plating

Resistance

Threshold Voltage

Max Junction Temperature (Tj)

Max Power Dissipation

Configuration

DS Breakdown Voltage-Min

FET Technology

FET Feature

View Compare
DMP22D6UT-7

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

SOT-523

3

2.012816mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

3

1

1

150mW Ta

Single

ENHANCEMENT MODE

150mW

P-Channel

SWITCHING

1.1 Ω @ 430mA, 4.5V

1V @ 250μA

175pF @ 16V

430mA Ta

20V

1.8V 4.5V

±8V

430mA

8V

-20V

20 pF

750μm

1.6mm

800μm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DMP2066UFDE-7

Diodes Incorporated

14 Weeks

Surface Mount

Surface Mount

6-UDFN Exposed Pad

6

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e4

yes

Active

1 (Unlimited)

3

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

HIGH RELIABILITY

Other Transistors

MOSFET (Metal Oxide)

DUAL

-

260

40

-

1

1

660mW Ta

Single

ENHANCEMENT MODE

-

P-Channel

SWITCHING

36m Ω @ 4.6A, 4.5V

1.1V @ 250μA

1537pF @ 10V

6.2A Ta

-

1.8V 4.5V

±12V

6.2A

12V

20V

-

580μm

2.05mm

2.05mm

No SVHC

No

ROHS3 Compliant

S-PDSO-N3

DRAIN

13.7 ns

14.4nC @ 4.5V

14ns

35.5 ns

79.1 ns

4.2A

Lead Free

-

-

-

-

-

-

-

-

-

DMP22D6UT-7 vs DMP2066UFDE-7
DMP2004K-7

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2010

e3

yes

Active

1 (Unlimited)

3

EAR99

-

ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

3

1

1

550mW Ta

Single

ENHANCEMENT MODE

550mW

P-Channel

SWITCHING

900m Ω @ 430mA, 4.5V

1V @ 250μA

175pF @ 16V

600mA Ta

20V

1.8V 4.5V

±8V

-600mA

8V

-20V

20 pF

1.1mm

2.9mm

1.3mm

No SVHC

No

ROHS3 Compliant

-

-

8.5 ns

-

4.3ns

19.2 ns

20.2 ns

0.6A

Lead Free

Tin

900mOhm

-1V

150°C

-

-

-

-

-

DMP22D6UT-7 vs DMP2004K-7
DMP2200UDW-7

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

-

Active

1 (Unlimited)

6

EAR99

-

-

-

-

-

GULL WING

260

30

-

2

-

-

-

DUAL GATE, ENHANCEMENT MODE

-

2 P-Channel (Dual)

SWITCHING

260m Ω @ 880mA, 4.5V

1.2V @ 250μA

184pF @ 10V

-

20V

-

-

900mA

8V

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

9.8 ns

2.1nC @ 4.5V

88ns

45 ns

24.4 ns

0.9A

-

Tin

-

-

-

450mW

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20V

METAL-OXIDE SEMICONDUCTOR

Standard

DMP22D6UT-7 vs DMP2200UDW-7