Diodes Incorporated DMP2200UDW-7

Name: DMP2200UDW-7
Brand: Diodes Incorporated
SKU: 2473806-DMP2200UDW-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMP2200UDW-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2473806-DMP2200UDW-7

Description:: MOSFET 2P-CH 20V 0.9A SOT363

ECAD Model:

Datasheet:: DMP2200UDW-7

Specifications

Diodes Incorporated DMP2200UDW-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP2200UDW-7.

Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Max Power Dissipation
450mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Number of Elements
2
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode
DUAL GATE, ENHANCEMENT MODE
Turn On Delay Time
9.8 ns
FET Type
2 P-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
260m Ω @ 880mA, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
184pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
2.1nC @ 4.5V
Rise Time
88ns
Drain to Source Voltage (Vdss)
20V
Fall Time (Typ)
45 ns
Turn-Off Delay Time
24.4 ns
Continuous Drain Current (ID)
900mA
Gate to Source Voltage (Vgs)
8V
Drain Current-Max (Abs) (ID)
0.9A
DS Breakdown Voltage-Min
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Standard
RoHS Status
ROHS3 Compliant

Description

DMP2200UDW-7 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of obsolete (EOL) components. The images we provide are for reference only, for detailed product information please see specification sheet DMP2200UDW-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMP2200UDW-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

DMP2200UDW-7 More Descriptions

Dual Mosfet, P-Ch, 20V, 0.9A, Sot-363 Rohs Compliant: Yes |Diodes Inc. DMP2200UDW-7
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Product Comparison

The three parts on the right have similar specifications to DMP2200UDW-7.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Configuration

Operating Mode

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

FET Technology

FET Feature

RoHS Status

Series

Terminal Finish

Technology

Power Dissipation-Max

Current - Continuous Drain (Id) @ 25°C

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Pbfree Code

Additional Feature

Subcategory

Terminal Position

JESD-30 Code

Number of Channels

Element Configuration

Case Connection

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Weight

Resistance

Pin Count

Power Dissipation

Threshold Voltage

Max Junction Temperature (Tj)

Feedback Cap-Max (Crss)

View Compare
DMP2200UDW-7

Diodes Incorporated

15 Weeks

Tin

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

Active

1 (Unlimited)

6

EAR99

450mW

GULL WING

260

30

2

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

DUAL GATE, ENHANCEMENT MODE

9.8 ns

2 P-Channel (Dual)

SWITCHING

260m Ω @ 880mA, 4.5V

1.2V @ 250μA

184pF @ 10V

2.1nC @ 4.5V

88ns

20V

45 ns

24.4 ns

900mA

8V

0.9A

20V

METAL-OXIDE SEMICONDUCTOR

Standard

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DMP2170U-7

Diodes Incorporated

17 Weeks

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2016

e3

Active

1 (Unlimited)

-

EAR99

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

-

P-Channel

-

90m Ω @ 3.5A, 4.5V

1.25V @ 250μA

303pF @ 10V

7.8nC @ 10V

-

20V

-

-

3.1A

-

-

-

-

-

ROHS3 Compliant

Automotive, AEC-Q101

Matte Tin (Sn)

MOSFET (Metal Oxide)

780mW Ta

3.1A Ta

2.5V 4.5V

±12V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

DMP2200UDW-7 vs DMP2170U-7
DMP2066UFDE-7

Diodes Incorporated

14 Weeks

-

Surface Mount

Surface Mount

6-UDFN Exposed Pad

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e4

Active

1 (Unlimited)

3

EAR99

-

-

260

40

1

-

ENHANCEMENT MODE

13.7 ns

P-Channel

SWITCHING

36m Ω @ 4.6A, 4.5V

1.1V @ 250μA

1537pF @ 10V

14.4nC @ 4.5V

14ns

-

35.5 ns

79.1 ns

6.2A

12V

4.2A

-

-

-

ROHS3 Compliant

-

Nickel/Palladium/Gold (Ni/Pd/Au)

MOSFET (Metal Oxide)

660mW Ta

6.2A Ta

1.8V 4.5V

±12V

yes

HIGH RELIABILITY

Other Transistors

DUAL

S-PDSO-N3

1

Single

DRAIN

20V

580μm

2.05mm

2.05mm

No SVHC

No

Lead Free

-

-

-

-

-

-

-

DMP2200UDW-7 vs DMP2066UFDE-7
DMP2004K-7

Diodes Incorporated

16 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2010

e3

Active

1 (Unlimited)

3

EAR99

-

GULL WING

260

40

1

-

ENHANCEMENT MODE

8.5 ns

P-Channel

SWITCHING

900m Ω @ 430mA, 4.5V

1V @ 250μA

175pF @ 16V

-

4.3ns

20V

19.2 ns

20.2 ns

-600mA

8V

0.6A

-

-

-

ROHS3 Compliant

-

-

MOSFET (Metal Oxide)

550mW Ta

600mA Ta

1.8V 4.5V

±8V

yes

ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD

Other Transistors

DUAL

-

1

Single

-

-20V

1.1mm

2.9mm

1.3mm

No SVHC

No

Lead Free

7.994566mg

900mOhm

3

550mW

-1V

150°C

20 pF

DMP2200UDW-7 vs DMP2004K-7