Diodes Incorporated DMP2004K-7
- Part Number:
- DMP2004K-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478948-DMP2004K-7
- Description:
- MOSFET P-CH 20V 600MA SOT23-3
- Datasheet:
- DMP2004K-7
Diodes Incorporated DMP2004K-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP2004K-7.
- Factory Lead Time16 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance900mOhm
- Additional FeatureESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max550mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation550mW
- Turn On Delay Time8.5 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs900m Ω @ 430mA, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds175pF @ 16V
- Current - Continuous Drain (Id) @ 25°C600mA Ta
- Rise Time4.3ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)19.2 ns
- Turn-Off Delay Time20.2 ns
- Continuous Drain Current (ID)-600mA
- Threshold Voltage-1V
- Gate to Source Voltage (Vgs)8V
- Drain Current-Max (Abs) (ID)0.6A
- Drain to Source Breakdown Voltage-20V
- Max Junction Temperature (Tj)150°C
- Feedback Cap-Max (Crss)20 pF
- Height1.1mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMP2004K-7 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 175pF @ 16V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -600mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-20V. And this device has -20V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.6A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20.2 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -1V threshold voltage. Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.
DMP2004K-7 Features
a continuous drain current (ID) of -600mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 20.2 ns
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)
DMP2004K-7 Applications
There are a lot of Diodes Incorporated
DMP2004K-7 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 175pF @ 16V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -600mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-20V. And this device has -20V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.6A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20.2 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -1V threshold voltage. Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.
DMP2004K-7 Features
a continuous drain current (ID) of -600mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 20.2 ns
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)
DMP2004K-7 Applications
There are a lot of Diodes Incorporated
DMP2004K-7 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
DMP2004K-7 More Descriptions
Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23
MOSFET P-CH 20V 600MA SOT23-3 / Trans MOSFET P-CH 20V 0.6A 3-Pin SOT-23 T/R
P-Channel 20 V 0.9 Ohms Surface Mount Enhancement Mode Mosfet - SOT-23-3
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-600mA; Source Voltage Vds:-20V; On Resistance
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -600mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.7ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 550mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
MOSFET P-CH 20V 600MA SOT23-3 / Trans MOSFET P-CH 20V 0.6A 3-Pin SOT-23 T/R
P-Channel 20 V 0.9 Ohms Surface Mount Enhancement Mode Mosfet - SOT-23-3
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-600mA; Source Voltage Vds:-20V; On Resistance
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -600mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.7ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 550mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to DMP2004K-7.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)Feedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesTerminal FinishGate Charge (Qg) (Max) @ VgsJESD-30 CodeCase ConnectionMax Power DissipationConfigurationDS Breakdown Voltage-MinFET TechnologyFET FeatureView Compare
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DMP2004K-716 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2010e3yesActive1 (Unlimited)3EAR99900mOhmESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLDOther TransistorsMOSFET (Metal Oxide)DUALGULL WING26040311550mW TaSingleENHANCEMENT MODE550mW8.5 nsP-ChannelSWITCHING900m Ω @ 430mA, 4.5V1V @ 250μA175pF @ 16V600mA Ta4.3ns20V1.8V 4.5V±8V19.2 ns20.2 ns-600mA-1V8V0.6A-20V150°C20 pF1.1mm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free-----------
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17 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2016e3-Active1 (Unlimited)-EAR99---MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED---780mW Ta----P-Channel-90m Ω @ 3.5A, 4.5V1.25V @ 250μA303pF @ 10V3.1A Ta-20V2.5V 4.5V±12V--3.1A-----------ROHS3 Compliant-Automotive, AEC-Q101Matte Tin (Sn)7.8nC @ 10V-------
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14 Weeks-Surface MountSurface Mount6-UDFN Exposed Pad6-SILICON-55°C~150°C TJTape & Reel (TR)2012e4yesActive1 (Unlimited)3EAR99-HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUAL-26040-11660mW TaSingleENHANCEMENT MODE-13.7 nsP-ChannelSWITCHING36m Ω @ 4.6A, 4.5V1.1V @ 250μA1537pF @ 10V6.2A Ta14ns-1.8V 4.5V±12V35.5 ns79.1 ns6.2A-12V4.2A20V--580μm2.05mm2.05mmNo SVHCNoROHS3 CompliantLead Free-Nickel/Palladium/Gold (Ni/Pd/Au)14.4nC @ 4.5VS-PDSO-N3DRAIN-----
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15 WeeksTinSurface MountSurface Mount6-TSSOP, SC-88, SOT-3636-SILICON-55°C~150°C TJTape & Reel (TR)2015e3-Active1 (Unlimited)6EAR99-----GULL WING26030-2---DUAL GATE, ENHANCEMENT MODE-9.8 ns2 P-Channel (Dual)SWITCHING260m Ω @ 880mA, 4.5V1.2V @ 250μA184pF @ 10V-88ns20V--45 ns24.4 ns900mA-8V0.9A--------ROHS3 Compliant---2.1nC @ 4.5V--450mWSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE20VMETAL-OXIDE SEMICONDUCTORStandard
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