Diodes Incorporated DMN63D8LV-7

Name: DMN63D8LV-7
Brand: Diodes Incorporated
SKU: 2473468-DMN63D8LV-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN63D8LV-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2473468-DMN63D8LV-7

Description:: MOSFET 2N-CH 30V 0.26A SOT563

ECAD Model:

Datasheet:: DMN63D8LV-7

Specifications

Diodes Incorporated DMN63D8LV-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN63D8LV-7.

Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2007
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Max Power Dissipation
450mW
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
DMN63D8L
Reference Standard
AEC-Q101
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
450mW
Turn On Delay Time
3.3 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.8 Ω @ 250mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
22pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
0.87nC @ 10V
Rise Time
3.2ns
Drain to Source Voltage (Vdss)
30V
Fall Time (Typ)
6.3 ns
Turn-Off Delay Time
12 ns
Continuous Drain Current (ID)
260mA
Threshold Voltage
1.5V
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
4.5Ohm
Drain to Source Breakdown Voltage
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
600μm
Length
1.7mm
Width
1.25mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Description:

The DMN63D8LV-7 is a MOSFET 2N-Channel 30V 0.26A SOT563 from Diodes Inc. It is a low voltage, low on-resistance, and low gate charge MOSFET that is suitable for a wide range of applications. It is designed to provide superior performance in a variety of switching and linear applications.

Features:

• Low voltage (30V)
• Low on-resistance (0.26A)
• Low gate charge
• High speed switching
• High current handling capability
• High reliability
• RoHS compliant

Applications:

The DMN63D8LV-7 is suitable for a wide range of applications, including:
• DC-DC converters
• Motor control
• Power management
• Automotive
• Industrial
• Lighting
• Audio/Video

DMN63D8LV-7 More Descriptions

Dual N-Channel 30 V 2.8 O 0.45 W SMT Enhancement Mode MosFet - SOT-563
Transistor MOSFET Array Dual N-CH 30V 260mA 6-Pin SOT-563 T/R
MOSFET, AEC-Q101, DUAL N-CH, 30V, SOT563; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 260mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 2.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 450mW; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Product Comparison

The three parts on the right have similar specifications to DMN63D8LV-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Reference Standard

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

FET Technology

FET Feature

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Pbfree Code

Configuration

Current - Continuous Drain (Id) @ 25°C

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

JESD-30 Code

Power - Max

View Compare
DMN63D8LV-7

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

6

SILICON

-55°C~150°C TJ

Cut Tape (CT)

2007

e3

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

FET General Purpose Power

450mW

FLAT

260

30

DMN63D8L

AEC-Q101

2

Dual

ENHANCEMENT MODE

450mW

3.3 ns

2 N-Channel (Dual)

SWITCHING

2.8 Ω @ 250mA, 10V

1.5V @ 250μA

22pF @ 25V

0.87nC @ 10V

3.2ns

30V

6.3 ns

12 ns

260mA

1.5V

20V

4.5Ohm

30V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

600μm

1.7mm

1.25mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
DMN6040SSDQ-13

Diodes Incorporated

18 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2016

e3

Active

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

-

1.3W

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

AEC-Q101

2

-

ENHANCEMENT MODE

-

-

2 N-Channel (Dual)

SWITCHING

40m Ω @ 4.5A, 10V

3V @ 250μA

1287pF @ 25V

22.4nC @ 10V

-

60V

-

-

5A

-

-

0.04Ohm

-

METAL-OXIDE SEMICONDUCTOR

Standard

-

-

-

-

ROHS3 Compliant

-

yes

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

5A Ta

5A

60V

-

-

DMN63D8LV-7 vs DMN6040SSDQ-13
DMN61D8LVT-13

Diodes Incorporated

17 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

-

-

820mW

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

-

2

-

ENHANCEMENT MODE

-

-

2 N-Channel (Dual)

SWITCHING

1.8 Ω @ 150mA, 5V

2V @ 1mA

12.9pF @ 12V

0.74nC @ 5V

-

60V

-

-

630mA

-

-

2.4Ohm

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-

-

-

-

ROHS3 Compliant

-

-

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

-

0.63A

60V

R-PDSO-G6

820mW

DMN63D8LV-7 vs DMN61D8LVT-13
DMN61D9UDW-13

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

-

-

320mW

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

-

2

-

ENHANCEMENT MODE

-

-

2 N-Channel (Dual)

SWITCHING

2 Ω @ 50mA, 5V

1V @ 250μA

28.5pF @ 30V

0.4nC @ 4.5V

-

60V

-

-

350mA

-

-

3.5Ohm

-

METAL-OXIDE SEMICONDUCTOR

Standard

-

-

-

-

ROHS3 Compliant

-

-

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

-

0.35A

60V

R-PDSO-G6

320mW

DMN63D8LV-7 vs DMN61D9UDW-13