Diodes Incorporated DMN6040SSD-13

Name: DMN6040SSD-13
Brand: Diodes Incorporated
SKU: 2847501-DMN6040SSD-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN6040SSD-13

Manufacturer:: Diodes Incorporated

Ventron No:: 2847501-DMN6040SSD-13

Description:: MOSFET 2N-CH 60V 5A 8SO

ECAD Model:

Datasheet:: DMN6040SSD-13

Specifications

Diodes Incorporated DMN6040SSD-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN6040SSD-13.

Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
73.992255mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Max Power Dissipation
1.7W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Reference Standard
AEC-Q101
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.3W
Turn On Delay Time
6.6 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
40m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1287pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
22.4nC @ 10V
Rise Time
8.1ns
Drain to Source Voltage (Vdss)
60V
Fall Time (Typ)
4 ns
Turn-Off Delay Time
20.1 ns
Continuous Drain Current (ID)
5A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
5A
Drain-source On Resistance-Max
0.04Ohm
Drain to Source Breakdown Voltage
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
1.5mm
Length
4.95mm
Width
3.95mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMN6040SSD-13 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMN6040SSD-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMN6040SSD-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

DMN6040SSD-13 More Descriptions

Transistor MOSFET Array Dual N-CH 60V 6.6A 8-Pin SOIC T/RAvnet Japan
60V Dual N-Ch Enhancement MOSFET SOIC8 | Diodes Inc DMN6040SSD-13
Dual N-Channel 60 V 40 mO Surface Mount Enhancement Mode Mosfet - SOIC-8
MOSFET, DUAL N-CH, 60V, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 1.3W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Product Comparison

The three parts on the right have similar specifications to DMN6040SSD-13.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Reference Standard

Number of Elements

Number of Channels

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

FET Technology

FET Feature

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Configuration

Current - Continuous Drain (Id) @ 25°C

DS Breakdown Voltage-Min

JESD-30 Code

Power - Max

View Compare
DMN6040SSD-13

Diodes Incorporated

18 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

73.992255mg

SILICON

-55°C~150°C TJ

Cut Tape (CT)

2013

e3

yes

Active

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

1.7W

GULL WING

260

40

AEC-Q101

2

2

Dual

ENHANCEMENT MODE

1.3W

6.6 ns

2 N-Channel (Dual)

SWITCHING

40m Ω @ 4.5A, 10V

3V @ 250μA

1287pF @ 25V

22.4nC @ 10V

8.1ns

60V

4 ns

20.1 ns

5A

20V

5A

0.04Ohm

60V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.5mm

4.95mm

3.95mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-
DMN6040SSDQ-13

Diodes Incorporated

18 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2016

e3

yes

Active

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

1.3W

GULL WING

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

2

-

-

ENHANCEMENT MODE

-

-

2 N-Channel (Dual)

SWITCHING

40m Ω @ 4.5A, 10V

3V @ 250μA

1287pF @ 25V

22.4nC @ 10V

-

60V

-

-

5A

-

5A

0.04Ohm

-

METAL-OXIDE SEMICONDUCTOR

Standard

-

-

-

-

ROHS3 Compliant

-

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

5A Ta

60V

-

-

DMN6040SSD-13 vs DMN6040SSDQ-13
DMN61D8LVT-13

Diodes Incorporated

17 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

-

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

-

820mW

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

2

-

-

ENHANCEMENT MODE

-

-

2 N-Channel (Dual)

SWITCHING

1.8 Ω @ 150mA, 5V

2V @ 1mA

12.9pF @ 12V

0.74nC @ 5V

-

60V

-

-

630mA

-

0.63A

2.4Ohm

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-

-

-

-

ROHS3 Compliant

-

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

-

60V

R-PDSO-G6

820mW

DMN6040SSD-13 vs DMN61D8LVT-13
DMN61D9UDW-13

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

-

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

-

320mW

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

2

-

-

ENHANCEMENT MODE

-

-

2 N-Channel (Dual)

SWITCHING

2 Ω @ 50mA, 5V

1V @ 250μA

28.5pF @ 30V

0.4nC @ 4.5V

-

60V

-

-

350mA

-

0.35A

3.5Ohm

-

METAL-OXIDE SEMICONDUCTOR

Standard

-

-

-

-

ROHS3 Compliant

-

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

-

60V

R-PDSO-G6

320mW

DMN6040SSD-13 vs DMN61D9UDW-13