Diodes Incorporated DMN601VK-7

Name: DMN601VK-7
Brand: Diodes Incorporated
SKU: 2473329-DMN601VK-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN601VK-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2473329-DMN601VK-7

Description:: MOSFET 2N-CH 60V 0.305A SOT-563

ECAD Model:

Datasheet:: DMN601VK-7

Specifications

Diodes Incorporated DMN601VK-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN601VK-7.

Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Weight
3.005049mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
2Ohm
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOW CAPACITANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Max Power Dissipation
250mW
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
305mA
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DMN601VK
Pin Count
6
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
250mW
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
Continuous Drain Current (ID)
305mA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.305A
Drain to Source Breakdown Voltage
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Feedback Cap-Max (Crss)
5 pF
Height
600μm
Length
1.6mm
Width
1.2mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMN601VK-7 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMN601VK-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMN601VK-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

DMN601VK-7 More Descriptions

Transistor MOSFET Array Dual N-CH 60V 305mA 6-Pin SOT-563 T/R
Dual N-Channel 60 V 2 Ohm Enhancement Mode Transistor SOT-563
Trans MOSFET N-CH 60V 0.305A Automotive 6-Pin SOT-563 T/R

Product Comparison

The three parts on the right have similar specifications to DMN601VK-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

FET Technology

FET Feature

Feedback Cap-Max (Crss)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Reference Standard

Configuration

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

JESD-30 Code

Power - Max

View Compare
DMN601VK-7

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

6

3.005049mg

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

2007

e3

yes

Active

1 (Unlimited)

6

EAR99

2Ohm

Matte Tin (Sn)

LOW CAPACITANCE

FET General Purpose Power

60V

250mW

FLAT

260

305mA

40

DMN601VK

6

2

Dual

ENHANCEMENT MODE

250mW

2 N-Channel (Dual)

SWITCHING

2 Ω @ 500mA, 10V

2.5V @ 250μA

50pF @ 25V

305mA

20V

0.305A

60V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

5 pF

600μm

1.6mm

1.2mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
DMN6040SSDQ-13

Diodes Incorporated

18 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2016

e3

yes

Active

1 (Unlimited)

8

EAR99

-

Matte Tin (Sn)

HIGH RELIABILITY

-

-

1.3W

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

-

-

2

-

ENHANCEMENT MODE

-

2 N-Channel (Dual)

SWITCHING

40m Ω @ 4.5A, 10V

3V @ 250μA

1287pF @ 25V

5A

-

5A

-

METAL-OXIDE SEMICONDUCTOR

Standard

-

-

-

-

-

-

ROHS3 Compliant

-

AEC-Q101

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

5A Ta

22.4nC @ 10V

60V

0.04Ohm

60V

-

-

DMN601VK-7 vs DMN6040SSDQ-13
DMN61D8LVT-13

Diodes Incorporated

17 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

-

Active

1 (Unlimited)

6

EAR99

-

Matte Tin (Sn)

-

-

-

820mW

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

-

-

2

-

ENHANCEMENT MODE

-

2 N-Channel (Dual)

SWITCHING

1.8 Ω @ 150mA, 5V

2V @ 1mA

12.9pF @ 12V

630mA

-

0.63A

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-

-

-

-

-

-

ROHS3 Compliant

-

-

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

-

0.74nC @ 5V

60V

2.4Ohm

60V

R-PDSO-G6

820mW

DMN601VK-7 vs DMN61D8LVT-13
DMN61D9UDW-13

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

-

Active

1 (Unlimited)

6

EAR99

-

Matte Tin (Sn)

-

-

-

320mW

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

-

-

2

-

ENHANCEMENT MODE

-

2 N-Channel (Dual)

SWITCHING

2 Ω @ 50mA, 5V

1V @ 250μA

28.5pF @ 30V

350mA

-

0.35A

-

METAL-OXIDE SEMICONDUCTOR

Standard

-

-

-

-

-

-

ROHS3 Compliant

-

-

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

-

0.4nC @ 4.5V

60V

3.5Ohm

60V

R-PDSO-G6

320mW

DMN601VK-7 vs DMN61D9UDW-13