Diodes Incorporated DMN5L06K-7

Name: DMN5L06K-7
Brand: Diodes Incorporated
SKU: 2848382-DMN5L06K-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN5L06K-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2848382-DMN5L06K-7

Description:: MOSFET N-CH 50V 300MA SOT23-3

ECAD Model:

Datasheet:: DMN5L06K-7

Part Pictures

Specifications

Diodes Incorporated DMN5L06K-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN5L06K-7.

Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
2Ohm
Terminal Finish
Matte Tin (Sn)
Additional Feature
ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
Subcategory
FET General Purpose Power
Voltage - Rated DC
50V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
300mA
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
350mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
350mW
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
Current - Continuous Drain (Id) @ 25°C
300mA Ta
Drive Voltage (Max Rds On,Min Rds On)
1.8V 5V
Vgs (Max)
±20V
Continuous Drain Current (ID)
300mA
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
50V
Max Junction Temperature (Tj)
150°C
Feedback Cap-Max (Crss)
5 pF
Height
1.1mm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMN5L06K-7 Description
The DMN5L06K-7 is an N-Channel enhancement mode MOSFET. The RDS(on) of this 50V N-channel enhancement mode MOSFET of the latest generation is minimized while maintaining the highest switching performance. This gadget is perfect for load switching and managing notebook batteries.

DMN5L06K-7 Features
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device
Low On-Resistance
Very Low Gate Threshold Voltage (1.0V max)
Low Input Capacitance

DMN5L06K-7 Applications
Load Switches
Level Switches

DMN5L06K-7 More Descriptions

N-Channel 50 V 2 Ohm Surface Mount Enhancement Mode Mosfet - SOT-23-3
Trans MOSFET N-CH 50V 0.3A Automotive 3-Pin SOT-23 T/R
MOSFET N-Channel 50V 0.3A SOT23 | Diodes Inc DMN5L06K-7
MOSFET, N CH, 50V, 0.3A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 300mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 2ohm; Rds(on) Test Voltage Vgs: ; Available until stocks are exhausted
MOSFET Operating temperature: -65...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 0.35 W
Transistors - FETs, MOSFETs - Single 1 (Unlimited) TO-236-3, SC-59, SOT-23-3 Surface Mount MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2 Ω @ 50mA, 5V 300mA Ta -65°C~150°C TJ MOSFET N-CH 50V 300MA SOT23-3
Mosfet, N Channel, 50V, 800Ma, Sot-23; Channel Type:N Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:800Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:5V; Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Diodes Inc. DMN5L06K-7

Certification