Diodes Incorporated DMN3135LVT-7

Name: DMN3135LVT-7
Brand: Diodes Incorporated
SKU: 3554029-DMN3135LVT-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN3135LVT-7

Manufacturer:: Diodes Incorporated

Ventron No:: 3554029-DMN3135LVT-7

Description:: MOSFET 2N-CH 30V 3.5A TSOT26

ECAD Model:

Datasheet:: DMN3135LVT-7

Specifications

Diodes Incorporated DMN3135LVT-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN3135LVT-7.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Max Power Dissipation
840mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
6
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Number of Channels
2
Operating Mode
ENHANCEMENT MODE
Turn On Delay Time
2.6 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
60m Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
305pF @ 15V
Gate Charge (Qg) (Max) @ Vgs
4.1nC @ 4.5V
Rise Time
4.6ns
Drain to Source Voltage (Vdss)
30V
Fall Time (Typ)
2.5 ns
Turn-Off Delay Time
13.1 ns
Continuous Drain Current (ID)
3.5A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
3.3A
Drain-source On Resistance-Max
0.047Ohm
Drain to Source Breakdown Voltage
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMN3135LVT-7 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMN3135LVT-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMN3135LVT-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

DMN3135LVT-7 More Descriptions

Trans MOSFET N-CH 30V 3.5A Automotive 6-Pin TSOT-23 T/R
Mosfet Bvdss: 25V~30V Tsot26 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMN3135LVT-7
MOSFET, DUAL N-CH, 30V, 3.5A, TSOT26; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.5A; Source Voltage Vds:30V; On
MOSFET, DUAL N-CH, 30V, 3.5A, TSOT26; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 840mW; Transistor Case Style: TSOT-26; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Certification