Diodes Incorporated DMN1029UFDB-7
- Part Number:
- DMN1029UFDB-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2473406-DMN1029UFDB-7
- Description:
- MOSFET 2N-CH 12V 5.6A 6UDFN
- Datasheet:
- DMN1029UFDB-7
Diodes Incorporated DMN1029UFDB-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN1029UFDB-7.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-UDFN Exposed Pad
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2015
- JESD-609 Codee4
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- Max Power Dissipation1.4W
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeS-PDSO-N6
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Power - Max1.4W
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs29m Ω @ 5A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds914pF @ 6V
- Gate Charge (Qg) (Max) @ Vgs19.6nC @ 8V
- Drain to Source Voltage (Vdss)12V
- Continuous Drain Current (ID)5.6A
- Drain-source On Resistance-Max0.029Ohm
- DS Breakdown Voltage-Min12V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureStandard
- RoHS StatusROHS3 Compliant
DMN1029UFDB-7 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMN1029UFDB-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMN1029UFDB-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMN1029UFDB-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMN1029UFDB-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DMN1029UFDB-7 More Descriptions
Mosfet, Dual N-Ch, 12V, 5.6A, U-Dfn2020 Rohs Compliant: Yes |Diodes Inc. DMN1029UFDB-7
Transistor MOSFET Array Dual N-CH 12V 7.2A 6-Pin uDFN2020 T/R
MOSFET, DUAL N-CH, 12V, 5.6A, U-DFN2020;
N-Channel Mosfet, 12V VDS, 8±V VGSDiodes Inc SCT
Conn Board Stacker HDR 30 POS 2mm Solder ST SMD
Transistor MOSFET Array Dual N-CH 12V 7.2A 6-Pin uDFN2020 T/R
MOSFET, DUAL N-CH, 12V, 5.6A, U-DFN2020;
N-Channel Mosfet, 12V VDS, 8±V VGSDiodes Inc SCT
Conn Board Stacker HDR 30 POS 2mm Solder ST SMD
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