DMG9926USD-13

Diodes Incorporated DMG9926USD-13

Part Number:
DMG9926USD-13
Manufacturer:
Diodes Incorporated
Ventron No:
2473498-DMG9926USD-13
Description:
MOSFET 2N-CH 20V 8A SOP8L
ECAD Model:
Datasheet:
DMG9926USD-13

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Specifications
Diodes Incorporated DMG9926USD-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG9926USD-13.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    850.995985mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Digi-Reel®
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    24mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    1.3W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    DMG9926USD
  • Pin Count
    8
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.3W
  • Turn On Delay Time
    13.2 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    24m Ω @ 8.2A, 4.5V
  • Vgs(th) (Max) @ Id
    900mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    867pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    8.8nC @ 4.5V
  • Rise Time
    12.6ns
  • Drain to Source Voltage (Vdss)
    20V
  • Fall Time (Typ)
    21.7 ns
  • Turn-Off Delay Time
    64.8 ns
  • Continuous Drain Current (ID)
    8A
  • Gate to Source Voltage (Vgs)
    8V
  • Drain Current-Max (Abs) (ID)
    8A
  • Drain to Source Breakdown Voltage
    20V
  • Pulsed Drain Current-Max (IDM)
    30A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Height
    1.5mm
  • Length
    4.95mm
  • Width
    3.95mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMG9926USD-13 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMG9926USD-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMG9926USD-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DMG9926USD-13 More Descriptions
Transistor MOSFET Array Dual N-CH 20V 8A 8-Pin SOIC T/R
Dual N Channel 20 V 8 A 24 mOhm Surface Mount Mosfet - SOP-8L
Mosfet, Dual, N-Ch, 20V, 8A Rohs Compliant: Yes |Diodes Inc. DMG9926USD-13
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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