Diodes Incorporated DMG9926UDM-7
- Part Number:
- DMG9926UDM-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2473320-DMG9926UDM-7
- Description:
- MOSFET 2N-CH 20V 4.2A SOT-26
- Datasheet:
- DMG9926UDM-7
Diodes Incorporated DMG9926UDM-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG9926UDM-7.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- Max Power Dissipation980mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberDMG9926UDM
- Pin Count6
- Number of Elements2
- Operating ModeENHANCEMENT MODE
- Power Dissipation980mW
- Turn On Delay Time8.4 ns
- FET Type2 N-Channel (Dual) Common Drain
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs28m Ω @ 8.2A, 4.5V
- Vgs(th) (Max) @ Id900mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds856pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs8.3nC @ 4.5V
- Rise Time8.2ns
- Drain to Source Voltage (Vdss)20V
- Fall Time (Typ)8.9 ns
- Turn-Off Delay Time40.4 ns
- Continuous Drain Current (ID)4.2A
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage20V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height1.3mm
- Length3.1mm
- Width1.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMG9926UDM-7 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMG9926UDM-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMG9926UDM-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMG9926UDM-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMG9926UDM-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DMG9926UDM-7 More Descriptions
Dual N-Channel Enhancement MOSFET TSSOP6 | Diodes Inc DMG9926UDM-7
Mosfet, Dual, N-Ch, 20V, 4.2A Rohs Compliant: Yes |Diodes Inc. DMG9926UDM-7
Dual N-Channel 20 V 28 mOhm Surface Mount Enhancement Mode Mosfet -SOT-26-6
MOSFET 2N-CH 20V 4.2A SOT-26 / Trans MOSFET N-CH 20V 4.2A 6-Pin SOT-26 T/R
Mosfet, Dual, N-Ch, 20V, 4.2A Rohs Compliant: Yes |Diodes Inc. DMG9926UDM-7
Dual N-Channel 20 V 28 mOhm Surface Mount Enhancement Mode Mosfet -SOT-26-6
MOSFET 2N-CH 20V 4.2A SOT-26 / Trans MOSFET N-CH 20V 4.2A 6-Pin SOT-26 T/R
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