DMG9926UDM-7

Diodes Incorporated DMG9926UDM-7

Part Number:
DMG9926UDM-7
Manufacturer:
Diodes Incorporated
Ventron No:
2473320-DMG9926UDM-7
Description:
MOSFET 2N-CH 20V 4.2A SOT-26
ECAD Model:
Datasheet:
DMG9926UDM-7

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Specifications
Diodes Incorporated DMG9926UDM-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG9926UDM-7.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    980mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    DMG9926UDM
  • Pin Count
    6
  • Number of Elements
    2
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    980mW
  • Turn On Delay Time
    8.4 ns
  • FET Type
    2 N-Channel (Dual) Common Drain
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    28m Ω @ 8.2A, 4.5V
  • Vgs(th) (Max) @ Id
    900mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    856pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    8.3nC @ 4.5V
  • Rise Time
    8.2ns
  • Drain to Source Voltage (Vdss)
    20V
  • Fall Time (Typ)
    8.9 ns
  • Turn-Off Delay Time
    40.4 ns
  • Continuous Drain Current (ID)
    4.2A
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    20V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Height
    1.3mm
  • Length
    3.1mm
  • Width
    1.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMG9926UDM-7 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMG9926UDM-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMG9926UDM-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DMG9926UDM-7 More Descriptions
Dual N-Channel Enhancement MOSFET TSSOP6 | Diodes Inc DMG9926UDM-7
Mosfet, Dual, N-Ch, 20V, 4.2A Rohs Compliant: Yes |Diodes Inc. DMG9926UDM-7
Dual N-Channel 20 V 28 mOhm Surface Mount Enhancement Mode Mosfet -SOT-26-6
MOSFET 2N-CH 20V 4.2A SOT-26 / Trans MOSFET N-CH 20V 4.2A 6-Pin SOT-26 T/R
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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