Diodes Incorporated DMC2990UDJ-7

Name: DMC2990UDJ-7
Brand: Diodes Incorporated
SKU: 2473460-DMC2990UDJ-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMC2990UDJ-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2473460-DMC2990UDJ-7

Description:: MOSFET N/P-CH 20V SOT963

ECAD Model:

Datasheet:: DMC2990UDJ-7

Specifications

Diodes Incorporated DMC2990UDJ-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMC2990UDJ-7.

Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-963
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1999
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Max Power Dissipation
350mW
Terminal Position
DUAL
Terminal Form
FLAT
Base Part Number
DMC2990
Reference Standard
AEC-Q101
Number of Elements
2
Number of Channels
2
Operating Mode
ENHANCEMENT MODE
Turn On Delay Time
5.8 ns
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
990m Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
27.6pF @ 15V
Current - Continuous Drain (Id) @ 25°C
450mA 310mA
Gate Charge (Qg) (Max) @ Vgs
0.5nC @ 4.5V
Rise Time
5.7ns
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
16.4 ns
Turn-Off Delay Time
31.1 ns
Continuous Drain Current (ID)
310mA
Gate to Source Voltage (Vgs)
8V
Drain Current-Max (Abs) (ID)
0.31A
Drain-source On Resistance-Max
0.99Ohm
Drain to Source Breakdown Voltage
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
450μm
Length
1.05mm
Width
850μm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Description: The Diodes Inc. Transistors - FETs, MOSFETs - Arrays DMC2990UDJ-7 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) array in a SOT963 package. It is a N/P-CH (N-Channel/P-Channel) device with a maximum drain-source voltage of 20V.

Features:
- N/P-CH MOSFET array in a SOT963 package
- Maximum drain-source voltage of 20V
- Low on-resistance
- Low gate charge
- Low input and output capacitance
- High switching speed

Applications: The DMC2990UDJ-7 is suitable for a wide range of applications, including power management, motor control, and switching applications. It is also suitable for use in automotive, industrial, and consumer electronics.

DMC2990UDJ-7 More Descriptions

Dual Mosfet, Complement/20V/0.45A/Sot963 Rohs Compliant: Yes |Diodes Inc. DMC2990UDJ-7
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Certification