D44H11

Fairchild/ON Semiconductor D44H11

Part Number:
D44H11
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2468967-D44H11
Description:
TRANS NPN 80V 10A TO-220
ECAD Model:
Datasheet:
TO220B03 Pkg Drawing

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Specifications
Fairchild/ON Semiconductor D44H11 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor D44H11.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN LEAD
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    2W
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 4A 1V
  • Current - Collector Cutoff (Max)
    10μA
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 400mA, 8A
  • Voltage - Collector Emitter Breakdown (Max)
    80V
  • Current - Collector (Ic) (Max)
    10A
  • Transition Frequency
    50MHz
  • Frequency - Transition
    50MHz
  • RoHS Status
    Non-RoHS Compliant
Description
D44H11 Overview
This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 400mA, 8A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 50MHz.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.

D44H11 Features
the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
a transition frequency of 50MHz


D44H11 Applications
There are a lot of Rochester Electronics, LLC
D44H11 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
D44H11 More Descriptions
D44H11 Series NPN/PNP 80 V 10 A Silicon Power Transistor Flange Mount - TO-220
80V 50W 40@4A,1V 10A NPN TO-220 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 80V 20A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
Bipolar Transistors - BJT NPN Gen Pur Switch
Power Bipolar, NPN, 1V, 400mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:50W; DC Collector Current:10A; DC Current Gain hFE:60; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:1V; Current Ic Continuous a Max:10A; Hfe Min:40; Package / Case:TO-220; Power Dissipation Pd:50W; Termination Type:Through Hole
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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