Cypress Semiconductor Corp CY62147GE30-45ZSXI
- Part Number:
- CY62147GE30-45ZSXI
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3234759-CY62147GE30-45ZSXI
- Description:
- IC SRAM 4MB 45NS 44TSOPII
- Datasheet:
- CY62147GE30-45ZSXI
Cypress Semiconductor Corp CY62147GE30-45ZSXI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY62147GE30-45ZSXI.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case44-TSOP (0.400, 10.16mm Width)
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2012
- SeriesMoBL®
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations44
- ECCN Code3A991.B.2.A
- HTS Code8542.32.00.41
- TechnologySRAM - Asynchronous
- Voltage - Supply2.2V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.8mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberCY62147
- JESD-30 CodeR-PDSO-G44
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.2V
- Memory Size4Mb 256K x 16
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization256KX16
- Memory Width16
- Write Cycle Time - Word, Page45ns
- Memory Density4194304 bit
- Access Time (Max)45 ns
- Height Seated (Max)1.194mm
- Length18.415mm
- Width10.16mm
- RoHS StatusROHS3 Compliant
CY62147GE30-45ZSXI Overview
The MoBL® series is a high-quality product with an HTS code of 8542.32.00.41, making it easily identifiable and compliant with international standards. It features a single function and has a supply voltage of 3V, making it suitable for a wide range of applications. With a terminal pitch of 0.8mm, it offers precise and efficient performance. The organization of this product is 256KX16, providing a memory width of 16 and a memory density of 4194304 bits. Additionally, it is ROHS3 compliant, ensuring that it meets the latest environmental regulations. With these specifications, the MoBL® series is a reliable and efficient choice for your electronic needs.
CY62147GE30-45ZSXI Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
CY62147GE30-45ZSXI Applications
There are a lot of Cypress Semiconductor Corp CY62147GE30-45ZSXI Memory applications.
data buffer
Cache memory
graphics card
eSRAM
supercomputers
networks
main computer memory
personal computers
printers
cell phones
The MoBL® series is a high-quality product with an HTS code of 8542.32.00.41, making it easily identifiable and compliant with international standards. It features a single function and has a supply voltage of 3V, making it suitable for a wide range of applications. With a terminal pitch of 0.8mm, it offers precise and efficient performance. The organization of this product is 256KX16, providing a memory width of 16 and a memory density of 4194304 bits. Additionally, it is ROHS3 compliant, ensuring that it meets the latest environmental regulations. With these specifications, the MoBL® series is a reliable and efficient choice for your electronic needs.
CY62147GE30-45ZSXI Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
CY62147GE30-45ZSXI Applications
There are a lot of Cypress Semiconductor Corp CY62147GE30-45ZSXI Memory applications.
data buffer
Cache memory
graphics card
eSRAM
supercomputers
networks
main computer memory
personal computers
printers
cell phones
CY62147GE30-45ZSXI More Descriptions
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 45 ns 44-TSOP II
Asynchronous SRAM, 4096 Kb Density, 45 ns Speed, SOP-44, RoHSCypress Semiconductor SCT
2.2V~3.6V 4Mbit TSOP-44 SRAM ROHS
IC SRAM 4MBIT PARALLEL 44TSOP II
STANDARD SRAM, 512KX8, 45NS, CMO
Asynchronous SRAM, 4096 Kb Density, 45 ns Speed, SOP-44, RoHSCypress Semiconductor SCT
2.2V~3.6V 4Mbit TSOP-44 SRAM ROHS
IC SRAM 4MBIT PARALLEL 44TSOP II
STANDARD SRAM, 512KX8, 45NS, CMO
The three parts on the right have similar specifications to CY62147GE30-45ZSXI.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityAccess Time (Max)Height Seated (Max)LengthWidthRoHS StatusSupplier Device PackageAccess TimeJESD-609 CodePbfree CodeTerminal FinishReach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusView Compare
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CY62147GE30-45ZSXI13 WeeksSurface Mount44-TSOP (0.400, 10.16mm Width)YES-40°C~85°C TATray2012MoBL®Active3 (168 Hours)443A991.B.2.A8542.32.00.41SRAM - Asynchronous2.2V~3.6VDUALNOT SPECIFIED13V0.8mmNOT SPECIFIEDCY62147R-PDSO-G443.6V2.2V4Mb 256K x 16VolatileSRAMParallel256KX161645ns4194304 bit45 ns1.194mm18.415mm10.16mmROHS3 Compliant----------
-
13 WeeksSurface Mount44-TSOP (0.400, 10.16mm Width)--40°C~85°C TATape & Reel (TR)-MoBL®Active3 (168 Hours)---SRAM - Asynchronous1.65V~2.2V----------4Mb 256K x 16VolatileSRAMParallel--55ns-----ROHS3 Compliant---------
-
-Surface Mount48-VFBGA--40°C~125°C TATray-MoBL®Obsolete3 (168 Hours)---SRAM - Asynchronous2.7V~3.3V----------2Mb 128K x 16VolatileSRAMParallel--70ns-----ROHS3 Compliant48-VFBGA (6x8)70ns-------
-
-Surface Mount32-TFSOP (0.724, 18.40mm Width)YES-40°C~125°C TATube-MoBL®Obsolete3 (168 Hours)32--SRAM - Asynchronous4.5V~5.5VDUAL26015V0.5mm--R-PDSO-G325.5V4.5V1Mb 128K x 8VolatileSRAMParallel128KX8870ns1048576 bit70 ns1.2mm18.4mm8mmROHS3 Compliant--e3/e4yesMATTE TIN/NICKEL PALLADIUM GOLDunknown2032COMMERCIAL
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